Segmented Electrode Plasma Control for Semiconductor Processing
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Solution Overview
Problem
Current semiconductor processing apparatuses face challenges in precisely controlling plasma energy spectrum, plasma energy radial distribution, and plasma density, particularly in achieving uniformity of deposition and etching, due to limited freedom in plasma adjustment.
Innovation Solution
A semiconductor processing apparatus with a plate featuring electrically isolated first and second electrodes, each selectively coupled to ground terminals via switches, allowing for different radio frequency control strategies, and a radio frequency generating and matching device that adjusts plasma features based on feedback signals from these electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a single electrode configuration is used, then the device structure is simple, but the freedom of plasma adjustment is limited and precise control of plasma parameters is difficult to achieve
Solution Approach 1:
The lower electrode is divided into multiple electrically isolated electrode regions (first, second, third, and fourth electrode regions) that can be independently controlled. This segmentation allows different radio frequency voltages to be applied to different regions, enabling precise control of plasma density and energy distribution across the wafer surface, thereby resolving the contradiction between simple structure and plasma adjustment freedom.
Solution Approach 2:
The patent implements dynamic control of plasma parameters by independently varying radio frequency voltages applied to different electrode regions. The controller can adjust voltage magnitudes and phases in real-time based on process requirements, transforming the static electrode configuration into a dynamic plasma control system that adapts to different processing needs.
2Manufacturing precision
If multiple independently controlled electrode regions are used, then precise control of plasma density and uniformity is achieved, but the device structure becomes more complex
Solution Approach 1:
Different electrode regions are assigned different radio frequency voltages to create localized plasma conditions. The first and second electrode regions can be controlled differently from the third and fourth regions, allowing optimization of plasma parameters for specific areas of the wafer. This local quality control enables precise adjustment of deposition and etching uniformity across different zones.
Solution Approach 2:
The multiple electrode regions share a common support structure and plasma generation function, but each region can perform different control functions. The same basic electrode design is replicated across four regions, reducing design complexity while enabling sophisticated plasma control through independent voltage application to each region.
3Measurement precision
If electrically isolated electrode regions with independent control are implemented, then plasma energy spectrum and radial distribution control is improved, but the radio frequency control system becomes more complex
Solution Approach 1:
The patent incorporates impedance sensing for each electrode region, allowing the control system to monitor plasma conditions and adjust radio frequency voltages accordingly. This feedback mechanism enables precise control of plasma energy spectrum and radial distribution by continuously adapting voltage parameters based on measured plasma impedance, resolving the contradiction between control precision and system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over plasma density and uniformity of deposition and etching processes, enhancing the flexibility and precision of semiconductor processing.
Implementation Method 1
a second plate including a third electrode, where the third electrode is electrically coupled to a radio frequency generating and matching device
Implementation Method 2
Plasma processing is used in the manufacturing of integrated circuits, photo masks, plasma display, and solar technology
Implementation Method 3
a wafer is processed by a plasma cavity through, for example, etching, plasma enhanced chemical vapor deposition (PECVD), or plasma enhanced physical vapor deposition (PEPVD)
Data Source
AI summary
This application provides a plate for a semiconductor processing apparatus, the plate including a first electrode and a second electrode, where the first electrode is selectively coupled to a first ground terminal via a first switch, the second electrode is selectively coupled to a second ground terminal via a second switch, and the first electrode and the second electrode are electrically isolated from each other.