Segmented ESD Protection Device for HBM and MM Standards
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor-based integrated circuits face damage from electrostatic discharge (ESD) due to inadequate ESD protection, which does not meet industry standards for both Human-Body Model (HBM) and Machine Model (MM) standards, leading to potential internal circuit damage.
Innovation Solution
An ESD protection device is designed with a substrate-based structure incorporating doped regions of different conductivity types, including a base doped region, inter doped regions, drain region, inserted doped region, source region, and a gate structure, with shallow trench isolation units to create additional ESD paths and enhance protection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional ESD protection structures are used, then the device can provide basic ESD protection, but it cannot simultaneously meet both HBM and MM industry standards
Solution Approach 1:
The ESD protection device is segmented into multiple functional regions including a first ESD protection path with a first doped region and a second ESD protection path with a second doped region. Each path is configured to handle different ESD scenarios, allowing the device to simultaneously meet both HBM and MM standards by dividing the protection function into specialized segments rather than using a single unified structure
Solution Approach 2:
Different doped regions are assigned different doping concentrations and conductivity types tailored to specific ESD protection needs. The first doped region has specific doping characteristics optimized for HBM protection while the second doped region has different characteristics optimized for MM protection, allowing each local region to excel at its specific protection function
2Reliability
If additional doped regions and structures are added to improve ESD protection, then protection effectiveness increases, but device complexity increases
Solution Approach 1:
Multiple ESD protection paths and doped regions are merged into a single integrated ESD protection device structure. The first and second ESD protection paths are combined within the same device, sharing common elements such as the substrate and isolation structures, which reduces overall complexity compared to implementing separate protection devices for different ESD standards
Solution Approach 2:
The ESD protection device is designed with multi-functional capability to simultaneously protect against both HBM and MM ESD events. By incorporating multiple doped regions with different characteristics within a single device structure, the device achieves universal protection against different ESD mechanisms without requiring multiple separate protection structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ESD protection device effectively meets industry standards by providing enhanced protection against ESD, reducing the risk of internal circuit damage and ensuring compliance with both HBM and MM standards.
Implementation Method 1
electrostatic discharge (ESD) protection device
Data Source
AI summary
An ESD protection device on a substrate includes a base doped region of a first conductivity type. A first inter doped region of a second conductivity type is in the base doped region. A drain region of the second conductivity type in the first inter doped region is connected to a first electrode terminal. An inserted doped region of the first conductivity type is in the drain region. A second inter doped region of the second conductivity type is in the base doped region. A source region of the second conductivity type is in the second inter doped region. A substrate-surface doped region of the first conductivity type in the substrate is adjacent to or in contact with the source region. A gate structure is between the drain and source regions in the substrate. The substrate-surface doped region and the source region are connected to a second electrode terminal.