Segmented Field Plate Semiconductor Structure for Lower On-Resistance
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Solution Overview
Problem
Conventional high-voltage semiconductor structures face challenges in minimizing on-resistance while maintaining low total gate charge, leading to increased chip size and resistance in turn-on resistors due to the need to avoid punch-through effects between the source and drain.
Innovation Solution
A semiconductor structure with a segmented field plate structure, where partial field plates are electrically connected to the gate or source, allowing for flexible configuration of on-resistance and total gate charge to achieve optimal device performance by segmenting the field plate into multiple partial field plates with varying lengths and connecting them to either the gate or source.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the channel length is increased to avoid punch-through effect, then the device reliability is improved, but the chip area is increased and on-resistance is increased
Solution Approach 1:
The field plate structure is divided into multiple segments (first field plate segment, second field plate segment, third field plate segment) positioned at different locations. This segmentation allows each segment to independently control the electric field in specific regions, preventing punch-through effect without requiring a uniformly long channel across the entire device, thus reducing the overall chip area.
Solution Approach 2:
Different field plate segments are positioned to provide localized electric field control: the first segment near the source controls the source region, the second segment over the channel controls the channel region, and the third segment near the drain controls the drain region. This local quality approach allows precise control of the electric field where needed, preventing punch-through without extending the channel length across the whole device.
2Reliability
If the channel length is increased to avoid punch-through effect, then the device reliability is improved, but the on-resistance is increased
Solution Approach 1:
The segmented field plate structure allows different segments to be independently optimized. The second field plate segment positioned over the channel can be configured to provide strong electric field control to prevent punch-through, while the first and third segments near source and drain can be optimized to reduce resistance in those regions, thus preventing punch-through without proportionally increasing on-resistance.
Solution Approach 2:
By providing localized electric field control through differently positioned field plate segments, the invention allows the channel region to have sufficient field control for punch-through prevention while the source and drain regions can maintain lower resistance characteristics, thus achieving reliability improvement without proportional on-resistance increase.
3Device complexity
If a conventional field plate structure is used, then the electric field control is simplified, but the on-resistance and total gate charge cannot be independently optimized
Solution Approach 1:
The field plate is segmented into multiple independently controllable sections. Each segment can be connected to different voltage sources or controlled by different gate signals, allowing independent optimization of on-resistance and total gate charge. The first segment can be optimized for low resistance while the second segment can be optimized for gate charge control, providing flexibility without excessive complexity.
Solution Approach 2:
The segmented field plate structure allows dynamic control where different segments can be activated or adjusted independently based on operating conditions. This enables the device to adaptively optimize between on-resistance and total gate charge depending on the required performance, providing versatility while maintaining manageable structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces on-resistance and total gate charge, enabling better device performance and achieving a lower figure of merit (FOM) by allowing for customizable on-resistance and total gate charge settings based on design requirements.
Implementation Method 1
the first field plate structure is disposed on the first insulating layer and at least partially overlapping the first gate structure. The first field plate structure is segmented into a first partial field plate and a second partial plate along a first direction.
Data Source
AI summary
A semiconductor structure, including a substrate, a first well, a second well, a first doped region, a second doped region, a first gate structure, a first insulating layer, and a first field plate structure. The first and second wells are disposed in the substrate. The first doped region is disposed in the first well. The second doped region is disposed in the second well. The first gate structure is disposed between the first and second doped regions. The first insulating layer covers a portion of the first well and a portion of the first gate structure. The first field plate structure is disposed on the first insulating layer, and it partially overlaps the first gate structure. Wherein the first field plate structure is segmented into a first partial field plate and a second partial field plate separated from each other along a first direction.