Segmented Flash Writes for Read-Write Collision Reduction

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Solution Overview

Problem

Higher bit density in flash memory leads to increased read-write collisions, resulting in unpredictable read latency and reduced performance in solid state storage devices.

Innovation Solution

Implementing a segmented write process that groups program loops into distinct write segments separated by a dwell time, allowing for staggered writing and reading operations to improve data retention, error rates, and threshold voltage margins.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If higher bit density flash memory cells are used, then storage capacity increases, but read-write collisions increase causing unpredictable read latency

Engineering Contradiction:
Improvestorage capacityVSAvoidread latency predictability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent segments the flash memory array into multiple independent channels, each capable of handling read and write operations simultaneously. This spatial segmentation allows parallel access patterns where reads and writes occur in different physical locations, reducing collisions while maintaining high storage capacity through multi-level cell technology

Inventive Principle:
Principle #1Segmentation

2Reliability

If more program loops are used to write data, then data retention and error rates improve, but write time increases

Engineering Contradiction:
Improvedata retentionVSAvoidwrite time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent implements periodic verify operations within the program loop structure, where verification is performed at regular intervals rather than continuously. This periodic action maintains data retention and error rate performance by ensuring proper programming while reducing the total number of operations needed, thereby decreasing write time

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent employs feedback mechanisms where verify results from previous program loops inform subsequent programming operations. This allows the system to adapt the number and intensity of program loops based on actual cell state, achieving reliable data retention with optimized write time by avoiding unnecessary additional programming cycles

Inventive Principle:
Principle #23Feedback

3Reliability

If segmented writes with dwell time are implemented, then read-write collisions decrease, but write operation duration increases

Engineering Contradiction:
Improveread-write collision reductionVSAvoidwrite operation duration
Core Design Contradiction:
ReliabilityVSDuration of action of moving object

Solution Approach 1:

The patent maintains continuity of useful action by overlapping read operations on one channel with write operations on another channel during the dwell time periods. This parallel execution ensures that the system remains productive throughout the entire write operation duration, minimizing the net impact on overall system performance while still achieving collision reduction

Inventive Principle:
Principle #20Continuity of useful action

Data Source

PatentUS10509598B2Method and apparatus for programming flash based storage using segmented writes
Publication Date: 2019.12.17 SANDISK TECHNOLOGIES LLC
  • US10509598B2 patent drawing
  • US10509598B2 patent drawing
  • US10509598B2 patent drawing

AI summary

Systems and methods are disclosed for writing data to a non-volatile memory (NVM) using a segmented write process. The NVM uses a plurality of program loops to write data to the NVM. The NVM groups the plurality of program loops into a plurality of write segments, and each write segment includes a distinct set of the plurality of program loops. The write segments are separated by a dwell time that allows read access before the data is written to the NVM.