Segmented Gate-Conductor Cell Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
The miniaturization of integrated circuits poses challenges in design and manufacturing, particularly in managing parasitic capacitance and IR drop, which affect the performance and reliability of transistors.
Innovation Solution
Incorporating a middle gate-conductor segment and a middle terminal-conductor segment aligned along the Y-direction, bounded by power lines, and adding a third power line to reduce parasitic capacitance and IR drop in the power grid net.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Weight of moving object
If the integrated circuit is miniaturized to reduce device size and power consumption, then the device footprint and power consumption are reduced, but parasitic capacitance and IR drop increase, degrading transistor performance
Solution Approach 1:
The gate conductor is divided into multiple segments (first gate-conductor segment, middle gate-conductor segment, second gate-conductor segment) separated by gaps. This segmentation reduces parasitic capacitance between the gate conductor and adjacent structures, thereby improving transistor performance in miniaturized circuits where parasitic effects become dominant.
Solution Approach 2:
A middle gate-conductor segment is introduced between the first and second gate-conductor segments, positioned adjacent to the power grid net. This middle segment acts as an intermediary that reduces the parasitic capacitance coupling between the power grid net and the gate conductor, mitigating the IR drop problem in miniaturized circuits.
2Reliability
If the gate conductor is segmented into multiple segments, then parasitic capacitance is reduced, but the manufacturing complexity increases
Solution Approach 1:
The middle gate-conductor segment is merged with the power grid net structure, positioned adjacent to it and forming an integrated configuration. This merging approach reduces manufacturing complexity by combining two functions (gate conduction and parasitic capacitance reduction) into a unified structure that can be fabricated using standard CMOS processes.
3Reliability
If power lines are added to reduce IR drop, then the power delivery reliability is improved, but the device area increases
Solution Approach 1:
The middle gate-conductor segment serves dual functions: it maintains the gate conductor's primary function of controlling the transistor channel, and simultaneously acts as a power delivery structure adjacent to the power grid net to reduce IR drop. This multi-functionality approach improves power delivery reliability without requiring additional dedicated power lines that would increase device area.
Data Source
AI summary
An integrated circuit includes a first power line and a second power line extending in a first direction. An integrated circuit includes a column of three gate-conductor segments aligned along a second direction and bounded by the first power line and the second power line. The three gate-conductor segments include a middle gate-conductor segment between a first gate-conductor segment and a second gate-conductor segment. The first gate-conductor segment intersects a first-type active-region structure at a channel region of a first-type transistor. The second gate-conductor segment intersects a second-type active-region structure at a channel region of a second-type transistor.