Segmented Gate Structure With Dielectric Feature for Short-Channel Control
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to complexity and the need for improved gate control and reduced short-channel effects.
Innovation Solution
A semiconductor structure is developed with nanostructures surrounded by a gate structure, utilizing dielectric features to separate gate portions and incorporating low k dielectric materials to reduce capacitance and enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control, then gate-channel coupling is increased, but fabrication complexity increases
Solution Approach 1:
The gate structure is divided into multiple segments (first gate portion, second gate portion, third gate portion) that wrap around the channel from different directions. This segmentation enables multi-gate control to improve gate-channel coupling while allowing each segment to be fabricated using standardized processes, thereby managing fabrication complexity through modular design
Solution Approach 2:
The gate structure transitions from planar 2D configuration to three-dimensional wrapping configuration. The gate portions extend in multiple dimensions to surround the channel, increasing gate control effectiveness. This dimensional change achieves superior electrical control without requiring proportional increases in fabrication complexity, as the additional dimensions are achieved through vertical stacking and lateral wrapping rather than increasing device footprint
2Productivity
If device dimensions are scaled down, then production efficiency is improved and costs are lowered, but manufacturing complexity increases
Solution Approach 1:
The channel is divided into multiple distinct regions (first channel region, second channel region, third channel region) with different materials or doping profiles. This segmentation allows each region to be optimized independently for specific functions while maintaining compact overall device dimensions, thereby improving performance without proportionally increasing manufacturing complexity
Solution Approach 2:
Multiple functional layers and structures are nested within each other in the vertical dimension. The gate portions wrap around the channel in a nested configuration, with insulating layers and conductive layers stacked vertically. This nesting approach achieves complex functionality in a compact footprint, improving production efficiency by reducing device area while managing manufacturing complexity through hierarchical structuring
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure improves gate control, reduces OFF-state current, and minimizes short-channel effects, enhancing the speed and efficiency of semiconductor devices.
Implementation Method 1
incorporating low k dielectric materials to reduce capacitance and enhance performance
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first nanostructures and second nanostructures formed over the substrate. The semiconductor structure also includes a gate structure including a first portion wrapping around the first nanostructures and a second portion wrapping around the second nanostructures. The semiconductor structure also includes a dielectric feature sandwiched between the first portion and the second portion of the gate structure. In addition, the dielectric feature includes a bottom portion and a top portion over the bottom portion, and the top portion of the dielectric feature includes a shell layer and a core portion surrounded by the shell layer.