Segmented Gate Electrode Transistor for Fast Switching
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Solution Overview
Problem
Conventional power transistors in DC/DC converters face challenges in fast switching due to elongated gate electrodes made of materials other than metal, leading to increased response delay and difficulty in quickly switching transistors, which affects the efficiency of current handling.
Innovation Solution
The semiconductor device incorporates a plurality of transistors with comb-shaped gate electrodes, where the extending portions are bisected to reduce response delay, and drivers are connected to the gate electrodes via metal wiring, allowing for fast switching while maintaining a large current capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the gate electrode is elongated to handle large current, then the current capacity is improved, but the switching speed deteriorates due to increased response delay
Solution Approach 1:
The gate electrode is divided into multiple segments along its extending direction, with each segment controlled by an independent driver. This segmentation allows each segment to switch independently, reducing the overall response delay while maintaining the total current capacity of the elongated gate electrode structure.
2Ease of manufacture
If the gate electrode is made of non-metal material, then the manufacturing process is simplified, but the switching response time increases
Solution Approach 1:
By segmenting the gate electrode into multiple sections, each with independent control, the patent reduces the effective switching distance for each segment. This allows non-metal gate materials to be used while maintaining acceptable switching speeds, as each segment switches faster than a single long gate would require.
3Speed
If multiple drivers are used to control segmented gate electrodes, then the switching speed is improved, but the device complexity increases
Solution Approach 1:
The gate electrode is segmented into multiple sections, each controlled by a dedicated driver circuit. This segmentation enables parallel switching operation across multiple gate sections, significantly reducing overall switching time while distributing the control complexity across multiple simple, identical driver units.
Data Source
AI summary
A semiconductor device includes a plurality of transistors, each having a gate electrode including extending portions having a length obtained by dividing the gate electrode causing interruption to switching at a desired frequency, wherein current inflow terminals of the plurality of transistors are connected to each other and current outflow terminals of the plurality of transistors are connected to each other.