Shift Register Gate Electrode Segmentation Against Electrostatic Damage
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Solution Overview
Problem
The increase in transistor size due to larger panel sizes in semiconductor devices using amorphous silicon or oxide semiconductors leads to increased wiring area, which is prone to electrostatic destruction from charge accumulation during manufacturing, reducing yield.
Innovation Solution
The gate electrodes are divided into multiple conductive films spaced apart and connected by a different conductive film in a separate layer, reducing the area of each conductive film and minimizing charge accumulation during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the transistor size is increased to meet current supply ability requirements for larger panels, then the current supply ability is improved, but the wiring area increases leading to charge accumulation and electrostatic destruction
Solution Approach 1:
The gate electrode wiring is divided into multiple separate conductive films (first conductive film and second conductive film) that are spaced apart from each other. This segmentation reduces the continuous area of the wiring, thereby reducing charge accumulation during plasma processing while still maintaining the required current supply ability through the distributed conductive structures.
Solution Approach 2:
A third conductive film is introduced as an intermediary element to electrically connect the first and second conductive films. This third conductive film is positioned differently from the gate electrode wiring, allowing it to serve as a bridge that maintains electrical continuity while the spaced gate electrode conductive films reduce antenna effect and charge accumulation.
2Power
If the transistor size is increased for larger panels, then the current supply ability is improved, but the yield decreases due to increased probability of electrostatic destruction
Solution Approach 1:
The gate electrode is segmented into multiple spaced conductive films, which reduces the continuous conductive area that would otherwise accumulate charge during manufacturing. This segmentation maintains the electrical function while reducing the risk of electrostatic destruction, thereby improving yield.
Solution Approach 2:
The connection between conductive films is achieved in a different dimensional arrangement - the third conductive film connects the first and second conductive films from a different spatial position, not in the same plane as the gate electrodes. This dimensional change allows electrical connectivity while physically separating the gate electrode conductive films to reduce charge accumulation.
3Device complexity
If one conductive film is used for gate electrodes of multiple transistors, then the layout is simplified, but charge accumulation occurs leading to electrostatic destruction
Solution Approach 1:
Instead of using a single continuous conductive film for all gate electrodes, the design segments the gate electrode wiring into multiple separate conductive films spaced apart. This segmentation reduces the total continuous area that can accumulate charge during plasma processing, while the overall layout remains relatively simple through the use of standard conductive film formation processes.
Solution Approach 2:
The third conductive film serves multiple functions: it electrically connects the first and second conductive films, it is positioned to avoid interference with other device components, and it maintains electrical continuity without requiring complex routing. This multi-functionality achieves the connection goal while keeping the layout manageable.
Data Source
AI summary
A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.