Segmented Gate Electrode Layout for Dense Semiconductor Integration
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Solution Overview
Problem
There is an increasing demand for semiconductor devices with improved reliability, high performance, and multiple functions, but existing technologies face challenges in achieving these requirements.
Innovation Solution
The semiconductor device incorporates a substrate with specific structural features including active patterns, gate electrodes, gate spacers, and a gate capping pattern, along with a gate cutting pattern and dielectric spacers, to enhance reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If complexity and integration density of semiconductor devices are increased to meet demand for improved characteristics, then performance and functionality are enhanced, but manufacturing precision and reliability become more difficult to maintain
Solution Approach 1:
The gate electrode structure is segmented into multiple gate electrodes (first gate electrode, second gate electrode, third gate electrode) with distinct functions. The gate cutting pattern divides the gate structure into separate regions, allowing independent control and optimization of different transistor types (PMOS and NMOS), thereby maintaining manufacturing precision while achieving high integration density
Solution Approach 2:
Different gate electrodes are assigned different local qualities through the gate cutting pattern. The first gate electrode controls PMOS transistors while the second and third gate electrodes control NMOS transistors. This local differentiation allows optimized manufacturing processes for each transistor type, maintaining precision despite overall device complexity
2Productivity
If complexity and integration density of semiconductor devices are increased to meet demand for improved characteristics, then performance and functionality are enhanced, but reliability deteriorates
Solution Approach 1:
The gate structure is segmented into multiple independently controlled gate electrodes separated by gate cutting patterns. This segmentation isolates potential failure modes between different transistor regions (PMOS and NMOS), preventing cascading failures and improving overall device reliability while maintaining high integration density
Solution Approach 2:
The gate cutting pattern acts as an intermediary structure between adjacent gate electrodes. It provides electrical isolation and mechanical separation, ensuring that defects or variations in one region do not propagate to neighboring regions, thereby enhancing reliability in high-density integration
Data Source
AI summary
A semiconductor device includes a substrate including a first active pattern and a second active pattern, a gate electrode including a first gate electrode on the first active pattern and a second gate electrode on the second active pattern, a gate cutting pattern between the first and second gate electrodes, gate spacers on opposing side surfaces of the gate electrode, and a gate capping pattern on top surfaces of the gate electrode, the gate cutting pattern, and the gate spacers and extending in the first direction. The gate cutting pattern includes a first and second side surfaces, which are opposite to each other in a second direction crossing the first direction. The first and side surfaces are in contact with respective ones of the gate spacers, and the top surface of the gate cutting pattern is closer to the substrate than the top surfaces of the pair of gate spacers.