Segmented Gate Contact Layout for Semiconductor Leakage Isolation
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, issues such as contact leakage become more pronounced, necessitating improved methods to integrate and isolate components effectively.
Innovation Solution
The formation of insulation features that divide semiconductor fins and gates, utilizing dielectric structures to isolate gate segments and enhance contact integrity, combined with precise etching and deposition processes to minimize leakage paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but contact leakage becomes more pronounced
Solution Approach 1:
The gate is divided into multiple gate segments separated by insulation features. This segmentation isolates adjacent contacts from each other, preventing leakage paths while maintaining high integration density. The insulation features act as barriers between segmented gate regions, allowing closer spacing of components without compromising contact isolation.
Solution Approach 2:
Insulation features are introduced as intermediary structures between adjacent gates and contacts. These dielectric structures serve as mediators that electrically isolate neighboring components, blocking leakage currents while enabling higher component density. The insulation features fill the role of intermediate elements that resolve the conflict between proximity and isolation.
2Reliability
If insulation features are formed to reduce contact leakage, then contact isolation is improved, but device complexity increases
Solution Approach 1:
The insulation features are merged with the gate structure formation process. The same dielectric material and deposition techniques used for gate isolation are also employed for contact isolation, combining multiple functions into a unified structural approach. This merging reduces the number of separate processing steps and simplifies the overall device architecture.
Solution Approach 2:
The insulation features serve multiple functions simultaneously: they provide electrical isolation between contacts, maintain mechanical support for overlying structures, and define precise registration for subsequent patterning steps. This multi-functionality reduces the need for additional specialized structures, thereby limiting the increase in device complexity while achieving improved contact isolation.
Data Source
AI summary
Semiconductor structures and methods of fabrication are provided. A semiconductor structure includes a first and second gate distanced from one another in a first direction, wherein each gate extends in a second direction perpendicular to the first direction; an insulation feature distanced from the first gate and the second gate in the first direction, wherein the insulation feature extends in the second direction from a first line end to a second line end; a first contact located between the first gate and the insulation feature and a second contact located between the second gate and the insulation feature; wherein each contact extends in the first direction, terminates at a first contact end, and terminates at a second contact end; the first contact ends define a first vertical plane that intersects the insulation feature; and the second contact ends define a second vertical plane that intersects the insulation feature.