Segmented Gate Line Structure for Memory Channel Short Isolation
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Solution Overview
Problem
As memory cell density increases and critical dimensions decrease, the aspect ratio of channels in semiconductor devices continues to rise, leading to potential short-circuits between bit-lines and word-lines, affecting the functionality of other channels and reducing effective read/write performance.
Innovation Solution
Incorporating gate lines between bit-lines and word-lines, which are electrically coupled to channels, to control the channel's closure upon a short-circuit, allowing more channels to be activated by a single bit-line without affecting others.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cell density increases and critical dimensions decrease, then storage capacity is improved, but channel aspect ratio increases leading to short-circuit risk between bit-lines and word-lines
Solution Approach 1:
The gate structure is segmented into multiple gate lines (first gate line, second gate line, third gate line) that divide the channel into separate regions. This segmentation allows independent control of different channel portions, enabling the channel to be closed at specific locations without affecting other regions, thereby preventing short-circuits while maintaining high density
Solution Approach 2:
The second gate line acts as an intermediary control element positioned between the first and third gate lines. It provides intermediate control capability to close the channel at the central region, offering finer-grained control over channel conduction and preventing short-circuits between bit-lines and word-lines in high-density configurations
2Length of moving object
If channel aspect ratio increases, then vertical integration is improved, but control over channel closure becomes difficult affecting other channels
Solution Approach 1:
The gate structure is divided into multiple independently controllable gate lines (first, second, and third gate lines) positioned at different vertical levels. Each gate line can independently close the channel at its respective location, providing precise control over channel conduction without affecting other channels, even with high aspect ratios
Solution Approach 2:
The gate control is extended from a single planar dimension to multiple vertical dimensions by stacking gate lines at different heights. This three-dimensional gate arrangement enables control at multiple vertical positions along the channel, improving ease of channel closure control while accommodating high aspect ratio channels
3Productivity
If more channels are activated by a single bit-line, then read/write performance is improved, but short-circuit risk increases
Solution Approach 1:
The gate structure is segmented into multiple independently controllable gate lines that can selectively close channels. This allows the system to activate multiple channels for parallel read/write operations while maintaining the ability to close individual channels to prevent short-circuits, thus improving productivity without compromising reliability
Data Source
AI summary
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a first bit-line extending in a first direction and a first word-line extending in a second direction substantially perpendicular to the first direction. The semiconductor device also includes a first channel. The first bit-line and the first word-line are electrically coupled to the first channel. The semiconductor device also includes a first gate line disposed between the first bit-line and the first word-line. The first gate line is electrically coupled to the first channel and configured to close the first channel once the first bit-line and the first word-line are shorted together through the first channel.