Segmented Gate Structures for Scaled MOSFET Contact Reliability
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Solution Overview
Problem
As semiconductor devices are scaled down, the operating characteristics of MOSFETs deteriorate, leading to defects and suboptimal electrical performance due to integration limitations.
Innovation Solution
The implementation of a semiconductor device design featuring gate structures with separation patterns that penetrate neighboring gate structures, aligned along a specific direction, and a lower dielectric layer, which helps in preventing defects and improving electrical characteristics by facilitating the formation of first contacts and maintaining consistent dielectric layer heights.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MOSFET sizes are scaled down to increase integration, then device density increases, but operating characteristics deteriorate and defects occur
Solution Approach 1:
The gate structure is divided into multiple gate electrodes separated by dielectric layers, creating a segmented configuration. This segmentation allows each gate electrode to be independently controlled, improving operating characteristics while maintaining high integration density through the multi-layer arrangement
Solution Approach 2:
The invention transitions from a planar gate structure to a three-dimensional stacked configuration with gate electrodes arranged in multiple vertical layers. This dimensional change enables increased integration density without further lateral scaling, thereby preserving operating characteristics
2Ease of manufacture
If continuous gate structures are used, then manufacturing is simpler, but pattern defects occur and electrical characteristics are suboptimal
Solution Approach 1:
The gate structure is divided into multiple discrete gate electrodes separated by dielectric layers, creating a segmented configuration. This segmentation allows each gate electrode to be independently controlled, improving operating characteristics while maintaining high integration density through the multi-layer arrangement
Solution Approach 2:
Dielectric layers are formed between gate electrodes in advance during the fabrication process, creating pre-defined separation regions. This preliminary action prevents pattern defects during subsequent processing steps and ensures precise electrical isolation
3Productivity
If gate structures are placed close together to increase density, then integration improves, but electrical interference and defects increase
Solution Approach 1:
Dielectric layers are formed between gate electrodes in advance during the fabrication process, creating pre-defined separation regions. This preliminary action prevents pattern defects during subsequent processing steps and ensures precise electrical isolation
Solution Approach 2:
Dielectric layers are introduced as intermediary materials between adjacent gate electrodes. These dielectric layers act as electrical insulators, preventing harmful electrical interference while allowing the gate structures to be placed in close proximity for high integration density
Data Source
AI summary
Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a plurality of gate structures that are spaced apart from each other in a first direction on a substrate and extend in a second direction intersecting the first direction, and a plurality of separation patterns penetrating immediately neighboring ones of the plurality of gate structures, respectively. Each of the plurality of separation patterns separates a corresponding one of the neighboring gate structures into a pair of gate structures that are spaced apart from each other in the second direction. The plurality of separation patterns are spaced apart from and aligned with each other along the first direction.