Segmented Gate Electrode Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
The increasing complexity of semiconductor manufacturing processes due to scaling down in IC technology has led to challenges in processing and manufacturing, particularly in reducing parasitic capacitance in semiconductor devices.
Innovation Solution
The implementation of a semiconductor device structure with a first dielectric material separating portions of a gate electrode layer and a second dielectric material, where the longitudinal axes of these materials are substantially parallel, to isolate active devices and reduce parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If geometry size is decreased to increase functional density, then production efficiency is improved and costs are lowered, but parasitic capacitance increases and manufacturing complexity increases
Solution Approach 1:
The gate electrode layer is segmented into multiple portions separated by dielectric materials, creating isolated regions that reduce parasitic capacitance between adjacent gate structures while maintaining high functional density through compact arrangement
Solution Approach 2:
Dielectric materials are introduced as intermediary substances between gate electrode portions to electrically isolate them and reduce parasitic capacitance coupling, allowing closer spacing of active devices without increasing interference
2Productivity
If geometry size is decreased to increase functional density, then production efficiency is improved and costs are lowered, but manufacturing complexity increases
Solution Approach 1:
The gate electrode layer is segmented into multiple portions separated by dielectric materials, creating isolated regions that reduce parasitic capacitance between adjacent gate structures while maintaining high functional density through compact arrangement
Solution Approach 2:
Dielectric materials are strategically placed in specific locations between gate electrode portions where parasitic capacitance is most problematic, providing localized electrical isolation without requiring complex modifications throughout the entire device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces parasitic capacitance, enhancing the performance and efficiency of semiconductor devices by minimizing electrical interference and improving manufacturing processes.
Implementation Method 1
the first dielectric material has a first longitudinal axis, the second dielectric material has a second longitudinal axis, and the first longitudinal axis is substantially parallel to the second longitudinal axis. As a result, parasitic capacitance is reduced.
Data Source
AI summary
Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region, a second source/drain region disposed adjacent the first source/drain region along a first direction, a third source/drain region disposed adjacent the first source/drain region along a second direction substantially perpendicular to the first direction, a first gate electrode layer disposed between the first source/drain region and the third source/drain region, a second gate electrode layer disposed adjacent the second source/drain region, and a first dielectric material disposed between the first and second gate electrode layers. The first dielectric material has a length less than or equal to a first distance between the first and second source/drain regions.