Segmented Guard Rings Prevent Short Circuits in Semiconductor Devices

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Solution Overview

Problem

Semiconductor devices face short circuits and operational failures due to water penetration beyond the guard ring, leading to potential differences and high electric fields that cause ion migration and contact between electrodes and the guard ring, resulting in faulty operations.

Innovation Solution

A semiconductor device with electrically conductive guard rings divided by isolating sections on the semiconductor chip, where the first guard ring is between the drain electrode and one side edge, and the second guard ring is between the gate electrode and another side edge, preventing equal potentialization and reducing high electric fields that could cause short circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a continuous guard ring is formed to surround the circuit forming area, then water penetration prevention is improved, but short circuit risk between electrodes increases due to potential difference and high electric field

Engineering Contradiction:
Improvewater penetration preventionVSAvoidshort circuit risk
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The continuous guard ring is divided into multiple separate guard ring sections by isolating sections. Each guard ring section is positioned between different electrodes and the side edges of the semiconductor chip, preventing direct electrical connection between electrodes through the guard ring while maintaining water barrier functionality.

Inventive Principle:
Principle #1Segmentation

2Reliability

If guard ring is positioned close to electrodes to prevent water penetration, then water resistance is improved, but electric field intensity increases causing ion migration and short circuit

Engineering Contradiction:
Improvewater resistanceVSAvoidelectric field intensity
Core Design Contradiction:
ReliabilityVSStress or pressure

Solution Approach 1:

By segmenting the guard ring into separate sections positioned between different electrodes, the electric field lines are redirected and the intensity of the electric field in any single region is reduced, preventing ion migration while maintaining effective water penetration prevention.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively prevents short circuits between the drain and gate electrodes, reducing the risk of operative faults and maintaining satisfactory breakdown voltage even when water penetrates beyond the guard ring.

Implementation Method 1

form a conductive moisture resistance ring so as to surround a circuit forming area on a semiconductor chip to thus prevent water penetration in the circuit forming area

Methodology Applied
Scientific EffectConductive moisture resistance: Conduction (electrical)

Implementation Method 2

the first and second guard rings being electrically isolated from each other by guard ring isolating sections provided on the semiconductor chip

Methodology Applied
Scientific EffectElectrical isolation: Electrical Resistance

Data Source

PatentUS8461667B2Semiconductor device
Publication Date: 2013.06.11 SUMITOMO ELECTRIC DEVICE INNOVATIONS
  • US8461667B2 patent drawing
  • US8461667B2 patent drawing
  • US8461667B2 patent drawing

AI summary

A semiconductor device includes a semiconductor chip, and a guard ring made of an electrically conductive material and arranged between electrodes on the semiconductor chip and side edges of the semiconductor chip, the guard ring being divided by isolating sections on the semiconductor chip.