Segmented Heat Dissipation Films for Reliable Semiconductor Packaging
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Solution Overview
Problem
In semiconductor packaging, the existing 3D IC technologies face challenges in achieving strong attachment between heat dissipation films and semiconductor devices, leading to potential delamination due to warpage during manufacturing processes, especially when using continuous heat dissipation structures that have weaker attachments to encapsulating materials.
Innovation Solution
The implementation of a configuration where heat dissipation films are formed in small pieces on the upper surfaces of semiconductor devices, with trenches between them, providing a stronger attachment to the devices and alleviating delamination risks by using multiple layers of metal materials like aluminum, titanium, and silver, and strategically placing these films to enhance thermal interface material contact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If continuous heat dissipation structures are used, then heat dissipation coverage is improved, but attachment strength deteriorates leading to delamination
Solution Approach 1:
The continuous heat dissipation structure is divided into discrete heat dissipation films positioned on specific high-heat-generation areas of the semiconductor device. This segmentation maintains adequate attachment strength by reducing the total film area while still providing effective heat dissipation from critical regions.
Solution Approach 2:
Heat dissipation films are selectively placed only on regions that generate significant heat, rather than covering the entire device surface. This localized approach optimizes the balance between heat dissipation effectiveness and attachment strength by concentrating thermal management resources where most needed.
2Temperature
If heat dissipation films are placed on encapsulating material, then heat dissipation area is improved, but attachment reliability deteriorates
Solution Approach 1:
The heat dissipation function is segmented to be performed only by films on the semiconductor device surface, excluding the encapsulating material. This avoids the attachment reliability issues associated with films on encapsulating material while still providing adequate heat dissipation coverage.
Solution Approach 2:
The semiconductor device itself acts as an intermediary heat dissipation path between the heat-generating components and the heat dissipation films, eliminating the need to place films directly on the encapsulating material and their associated attachment problems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration strengthens the attachment between heat dissipation films and semiconductor devices, reduces delamination risks, and improves heat dissipation performance by allowing for better thermal interface material contact and stress reduction, enhancing the reliability and efficiency of the semiconductor package.
Implementation Method 1
heat dissipation films are respectively disposed on and jointly cover upper surfaces of the plurality of semiconductor devices... improves heat dissipation performance by allowing for better thermal interface material contact
Data Source
AI summary
A semiconductor package includes a redistribution structure, a plurality of semiconductor devices, and a plurality of heat dissipation films. The plurality of semiconductor devices mounted on the redistribution structure. The plurality of heat dissipation films are respectively disposed on and jointly covering upper surfaces of the plurality of semiconductor devices. A plurality of trenches are respectively extended between each two of the plurality of heat dissipations and extended between each two of the plurality of semiconductor devices.