Segmented Heater Widths for CVD Temperature Uniformity
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Solution Overview
Problem
Traditional CVD devices fail to maintain temperature uniformity on larger epitaxial substrates during film formation, leading to non-uniform film thickness and emission in micro light-emitting diode elements.
Innovation Solution
A heating apparatus with a rotating stage, multiple wafer carriers, and distinct heaters, where the first and second heaters have different widths and temperatures, ensuring partial overlap and varying spacings to enhance temperature uniformity, and a CVD system incorporating these features to achieve uniform film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a traditional single heater is used in CVD device, then the device structure is simple, but the temperature uniformity on large epitaxial substrates deteriorates
Solution Approach 1:
The heating system is divided into multiple independent heater units (first heater, second heater, third heater) with different radial widths, each contributing to temperature distribution across different regions of the rotating stage. This segmentation allows independent control and optimization of temperature profiles for different substrate sizes and positions.
Solution Approach 2:
Each heater unit is designed with specific radial width characteristics to provide localized heating zones. The first heater has a wider radial width for outer region heating, while the second and third heaters have narrower widths for inner region heating, creating differentiated local temperature qualities that collectively achieve overall uniformity.
2Area of stationary object
If the epitaxial substrate size increases, then the substrate area increases, but the temperature uniformity requirement becomes harder to satisfy
Solution Approach 1:
The heating approach transitions from a single radial heating dimension to a multi-dimensional heating strategy by implementing heaters at different radial positions with different width profiles. This creates a three-dimensional heating architecture (radial position × heater width × temperature control) that can accommodate various substrate sizes while maintaining uniformity.
Solution Approach 2:
The system dynamically adjusts heating parameters including the radial widths of different heater units, their spacing distances, and individual temperature settings. By changing these parameters according to substrate size requirements, the system optimizes temperature distribution for both small and large substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves temperature uniformity on epitaxial substrates, resulting in uniform film thickness and enhanced light emission of micro light-emitting diode chips.
Implementation Method 1
The first heater is disposed under the rotating stage. The first heater includes a first width in a radial direction of the rotating stage. The second heater is disposed under the rotating stage. The second heater and the first heater are separated from each other.
Implementation Method 2
The rotating stage drives the wafer carriers to rotate on the rotating axis... ensuring partial overlap and varying spacings to enhance temperature uniformity
Data Source
AI summary
A heating apparatus including a rotating stage, a plurality of wafer carriers, a first heater, and a second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate on the rotating axis. The first heater is disposed under the rotating stage. The first heater includes a first width in a radial direction of the rotating stage. The second heater is disposed under the rotating stage. The second heater and the first heater are separated from each other. The second heater includes a second width in the radial direction of the rotating stage, and the first width is not equal to the second width. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.