Segmented Ion Collector for Wafer Plasma Uniformity Monitoring
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Solution Overview
Problem
Plasma systems in semiconductor manufacturing face challenges in monitoring and maintaining uniform ion distribution across large wafers, which affects the yield and quality of semiconductor devices.
Innovation Solution
A segmented ion collector design with multiple physically and electrically isolated segments, each connected to an integrator, measures ion distribution and uniformity, allowing for real-time adjustments to plasma system parameters to correct non-uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a single integrated ion collector is used, then the device structure is simple, but the measurement precision of ion distribution uniformity is insufficient
Solution Approach 1:
The ion collector is divided into multiple segments arranged in a circular pattern around the wafer. Each segment independently measures ion flux from a specific angular direction, enabling precise mapping of ion distribution uniformity across the wafer surface while maintaining a relatively simple overall structure.
2Measurement precision
If multiple detectors are distributed around the wafer, then the measurement precision improves, but the device complexity increases
Solution Approach 1:
Each segment of the ion collector serves multiple functions: it acts as both a measurement detector for ion flux and as part of the overall circular array structure. The segments are electrically isolated but structurally integrated, allowing the system to achieve high measurement precision without proportionally increasing device complexity.
Solution Approach 2:
Multiple ion collection segments are combined into a single circular collector assembly that surrounds the wafer. This merged structure allows simultaneous measurement from multiple angular positions while sharing common structural support and electrical connection infrastructure, reducing overall system complexity compared to distributed detectors.
3Manufacturing precision
If real-time ion distribution monitoring is implemented, then the manufacturing precision improves, but the loss of time for system adjustments increases
Solution Approach 1:
The ion collector provides real-time measurement of ion distribution uniformity across the wafer surface. This information is fed back to the plasma generation system, enabling dynamic adjustment of plasma parameters to maintain uniform ion flux, thereby improving manufacturing precision while minimizing downtime for corrections.
Solution Approach 2:
The segmented ion collector is positioned to monitor ion distribution before significant non-uniformity develops during the plasma process. By detecting early deviations, the system can make preliminary adjustments to plasma parameters, preventing the need for major interruptions and time-consuming reconfigurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise monitoring and correction of plasma uniformity, enhancing the yield and quality of semiconductor devices by ensuring consistent ion distribution across wafer surfaces.
Implementation Method 1
Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma
Data Source
AI summary
An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.