Segmented Isolator Electrodes for Lower Parasitic Capacitance

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Solution Overview

Problem

Conventional device isolators suffer from variable current paths within doped substrate regions, leading to parasitic capacitance and reduced quality factor (Q), which affects their performance.

Innovation Solution

The integration of first, second, and third metallic elements over a substrate with a doped region, where the first metallic elements form shorter pathways for current to dissipate parasitic resistivity, enhancing the quality factor (Q) by providing a non-continuous metallic layer and oxide separation, thereby improving isolator performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional flat bottom electrode isolators are used, then device isolation is achieved, but parasitic capacitance increases and quality factor decreases

Engineering Contradiction:
Improveisolation performanceVSAvoidparasitic capacitance
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The bottom electrode is segmented into multiple fingers rather than using a single flat electrode. This segmentation creates multiple isolated current paths through the doped region, reducing the effective parasitic capacitance while maintaining isolation functionality. The finger-like structures are separated by trenches or dielectric material, further reducing capacitive coupling.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The electrode structure transitions from a two-dimensional flat surface to a three-dimensional finger-like array extending into the substrate. This dimensional change increases the effective area for isolation while reducing parasitic capacitance through the distributed finger configuration, achieving both isolation performance and reduced parasitic effects.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If conventional flat bottom electrode isolators are used, then device isolation is achieved, but quality factor is reduced

Engineering Contradiction:
Improveisolation performanceVSAvoidquality factor
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The bottom electrode is segmented into multiple fingers rather than using a single flat electrode. This segmentation creates multiple isolated current paths through the doped region, reducing the effective parasitic capacitance while maintaining isolation functionality. The finger-like structures are separated by trenches or dielectric material, further reducing capacitive coupling.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the electrode structure are optimized for different functions: the finger tips provide isolation contact, the finger bodies provide current paths, and the spaces between fingers reduce parasitic capacitance. This local optimization of structure and material properties enhances overall quality factor while maintaining isolation performance.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration results in a nearly ten-fold improvement in the quality factor (Q) compared to conventional isolators, effectively reducing parasitic capacitance and enhancing isolator efficiency.

Implementation Method 1

a series of contacts coupling a plurality of first metallic elements formed over the substrate to the doped region

Methodology Applied
Scientific EffectElectrical Conduction: Conduction (electrical)

Implementation Method 2

Conventional isolators are used to in many devices to isolate functional sections of electrical systems in order to prevent current flow between them but allow data to pass between two devices. This is typically done by capacitors

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS11901282B2Device isolators
Publication Date: 2024.02.13 TEXAS INSTRUMENTS INC
  • US11901282B2 patent drawing
  • US11901282B2 patent drawing
  • US11901282B2 patent drawing

AI summary

An integrated semiconductor device having a metallic element formed between a capacitor with and a doped region.