Segmented Moisture-Proof Dam for Semiconductor Fuse Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor device fabrication methods result in moisture penetration through cracks, leading to corrosion and increased leakage current due to the expansion of capping patterns caused by external moisture and oxygen reaction, which compromises the reliability of the device.
Innovation Solution
A semiconductor device with a moisture-proof dam structure is fabricated, featuring a fuse guard dam surrounded by upper and lower extension dams and guard dams, along with a passivation layer, to prevent moisture and contaminated materials from entering through cracks, ensuring the integrity of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional moisture-proof dam structure is used, then the device structure is simple, but moisture penetrates through cracks causing corrosion and increased leakage current
Solution Approach 1:
The moisture-proof dam is divided into multiple segments: a first dam portion extending from the fuse guard dam, a second dam portion extending from the first dam portion, and a third dam portion extending from the second dam portion. Each segment sequentially surrounds the fuse region at different distances, creating a multi-layered defense against moisture penetration while maintaining structural clarity and functionality.
Solution Approach 2:
The moisture-proof dam structure extends in multiple spatial dimensions with dam portions at different distances from the fuse region (first dam portion at intermediate distance, second dam portion farther away, third dam portion even farther). This multi-dimensional arrangement creates redundant moisture barriers that prevent crack-induced penetration while preserving overall structural simplicity.
2Ease of manufacture
If the capping pattern is exposed through the fuse window, then laser beam access for fuse cutting is enabled, but moisture and oxygen cause expansion and stress leading to cracks
Solution Approach 1:
The moisture-proof dam structure is constructed before final device assembly, with dam portions extending at predetermined distances from the fuse guard dam. This preliminary arrangement of protective barriers ensures that when the fuse window is formed and laser cutting is performed, the capping pattern remains protected from moisture and oxygen exposure, preventing expansion and crack formation.
Solution Approach 2:
The first, second, and third dam portions act as intermediary protective barriers between the exposed capping pattern (accessible through the fuse window for laser cutting) and the harmful external environment (moisture and oxygen). These intermediary structures allow manufacturing access while simultaneously providing environmental protection.
3Productivity
If a single-layer moisture-proof dam is used, then the fabrication process is simple, but moisture penetration through cracks compromises device reliability
Solution Approach 1:
The moisture-proof dam is segmented into multiple functional portions (first, second, and third dam portions) that can be formed in an integrated fabrication process. Each segment provides an additional moisture barrier, creating a multi-layered protection system that enhances reliability while maintaining fabrication efficiency through unified processing steps.
Solution Approach 2:
The moisture-proof dam structure combines multiple dam portions made from the same or similar materials but arranged in a composite spatial configuration. This composite arrangement provides enhanced moisture protection through multiple barriers while allowing the structure to be fabricated using standard semiconductor manufacturing processes, thus maintaining productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The moisture-proof dam effectively prevents moisture and contaminants from entering the semiconductor device, reducing the risk of corrosion and leakage current, thereby enhancing the reliability and longevity of the device.
Implementation Method 1
A fuse guard dam surrounding the fuse region is provided. At least two upper extension dams sequentially surrounding the fuse region, connected to the fuse guard dam, are provided in the cover insulating layer.
Implementation Method 2
external moisture, for example, moisture in the air, may be introduced into an interface of the first capping pattern 18a from the outside along a path represented by arrow 'A' through the fuse window 36
Data Source
AI summary
A semiconductor device having a moisture-proof dam and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating layer provided on a substrate having a fuse region. A fuse guard dam is provided on the interlayer insulating layer to surround the fuse region. A cover insulating layer is provided on the interlayer insulating layer to cover the fuse guard dam and have a fuse window exposing a middle part of the fuse region, and at least two upper extension dams are provided in the cover insulating layer to sequentially surround the fuse region and be connected to the fuse guard dam.