Segmented Multi-Gate Layout for Short-Channel Current Control
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Solution Overview
Problem
Current semiconductor devices face challenges in scaling integration density and effectively controlling current without increasing gate length, while also suppressing short channel effects in multi-gate transistors.
Innovation Solution
The semiconductor device incorporates a substrate with active patterns and gate electrodes that extend in specific directions, featuring gate cutting and active cutting structures to improve current control and reduce short channel effects, along with a via contact connecting source/drain patterns to a power rail, enhancing electrical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistor with three-dimensional channel is used, then integration density is improved, but short channel effect increases
Solution Approach 1:
The gate electrode is divided into multiple segments along the channel width direction, with gate cutting structures separating adjacent gate electrodes. This segmentation allows independent control of different channel regions, improving current control capability while maintaining high integration density through the multi-gate configuration.
Solution Approach 2:
Gate cutting structures are selectively positioned at specific locations where short channel effects are most pronounced. The cutting structures create localized field control in critical regions, providing enhanced electrostatic control exactly where needed without requiring complete gate restructuring throughout the entire device.
2Reliability
If gate length is increased to control current, then current control capability is improved, but device area increases
Solution Approach 1:
The invention transitions from controlling current solely through gate length (one dimension) to utilizing gate width segmentation (adding a second dimension). By dividing the gate into multiple segments across the channel width, current control is achieved through both length and width dimensions, enabling effective control without increasing overall device footprint.
Solution Approach 2:
The segmented gate structure enables dynamic and independent control of different gate segments, allowing flexible adjustment of electric fields in different channel regions. This dynamic control capability provides superior current modulation compared to a single uniform gate, achieving better control with compact dimensions.
Data Source
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AI summary
A semiconductor device includes a substrate with opposite first and second surfaces in a first direction, an active pattern on the first surface in a second direction, a gate electrode in a third direction on the active pattern, a source/drain on at least one side of the gate electrode and connected to the active pattern, a gate cutting structure on one side of the active pattern and cutting the gate electrode, the gate cutting structure including third and fourth surfaces opposite to each other in the first direction, and the fourth surface being coplanar with the second surface of the substrate, a power rail on the second surface of the substrate and extending in the second direction, and a via contact through the substrate, a first end of the via contact contacting the power rail, and a second end of the via contact connected to the source/drain.