Segmented Nanosheet Gate Layout With Isolation for Short-Channel Control
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Solution Overview
Problem
The downscaling of integrated circuit devices leads to the short-channel effect, reducing the reliability of semiconductor devices, which existing technologies have not adequately addressed through conventional transistor structures.
Innovation Solution
A semiconductor device with a nanosheet stack and multiple gate structures, including a main gate electrode and sub-gate electrodes, is designed to mitigate the short-channel effect by incorporating internal spacers and a device isolation layer, enhancing the device's reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistor structures are used for downscaling, then manufacturing simplicity is maintained, but short-channel effect increases reducing device reliability
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode and second gate electrode) that are spatially separated and independently controllable. This segmentation allows each gate segment to independently modulate the channel, providing better electrostatic control and reducing short-channel effects while maintaining manufacturing feasibility through standardized fabrication processes
Solution Approach 2:
The patent transitions from a planar gate structure to a three-dimensional configuration where gate electrodes are positioned at different vertical levels (first gate electrode at first level, second gate electrode at second level). This vertical dimensionality addition enhances electrostatic control over the channel without increasing lateral footprint, effectively mitigating short-channel effects in scaled devices
2Reliability
If multi-gate structures are implemented, then short-channel effect is reduced improving reliability, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The gate is segmented into multiple independent electrodes positioned at different locations and levels, allowing each segment to be formed using standard fabrication techniques while collectively providing enhanced electrostatic control. This segmentation approach enables incremental integration of advanced features without requiring complete process overhaul
Solution Approach 2:
The multi-segment gate structure serves multiple functions: it provides electrostatic control for short-channel effect mitigation, enables independent voltage control for advanced device modes of operation, and maintains compatibility with existing fabrication processes. This multi-functionality justifies the increased structural complexity by delivering multiple performance benefits
Data Source
AI summary
A semiconductor device including an active region extending in a first horizontal direction, a nanosheet stack apart from the active region, a plurality of gate structures extending in a second horizontal direction and including a plurality of gate electrodes, a plurality of source/drain regions arranged on sidewalls of the gate structures, and a device isolation layer extending in a vertical direction, wherein the plurality of gate structures include a first gate structure in which a source/drain region is arranged on one sidewall and the device isolation layer is arranged on the other sidewall, and a second gate structure in which source/drain regions are arranged on both sidewalls, wherein the plurality of gate electrodes of the first gate structure include a main gate electrode positioned at the uppermost end and a plurality of sub-gate electrodes, and an internal spacer is between the device isolation layer and the plurality of sub-gate electrodes.