Segmented Pattern Structure for Crack-Resistant Semiconductor Layers
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Solution Overview
Problem
Conventional semiconductor devices experience cracks and fractures due to thermal expansion differences between conductive and insulation layers, leading to compromised electrical characteristics.
Innovation Solution
A pattern structure with specific alignments and spacings of conductive and insulation patterns on a substrate, including a multi-layered barrier pattern with metal nitride, is used to minimize cracks and fractures, employing a silicon oxide insulation layer to enhance thermal stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive layer is deposited in an opening through the insulation layer, then the electrical connection is established, but cracks are generated at the boundary between the conductive layer and the insulation layer due to thermal expansion differences
Solution Approach 1:
The conductive layer is divided into multiple segments (first conductive patterns and second conductive patterns) that are spaced apart rather than forming a continuous layer. This segmentation reduces the overall thermal stress accumulation and prevents crack propagation across the entire structure, while still maintaining necessary electrical connections through the distributed conductive elements.
Solution Approach 2:
A barrier pattern is introduced as an intermediary layer between the conductive layer and the insulation layer. This barrier pattern acts as a stress buffer that accommodates the differential thermal expansion between the metal conductive layer and the ceramic insulation layer, preventing direct stress transmission that would cause cracks at their interface.
2Reliability
If the conductive layer is formed at high temperature, then the electrical properties are optimized, but the thermal expansion difference causes separation from the insulation layer
Solution Approach 1:
The formation temperature of the conductive layer is optimized to balance electrical property development with thermal stress management. By controlling the deposition temperature and subsequent annealing conditions, the conductive layer achieves desired electrical characteristics while minimizing excessive thermal expansion that would cause separation from the insulation layer.
Solution Approach 2:
The barrier pattern serves as a thermal and mechanical intermediary that allows the conductive layer to undergo thermal expansion during high-temperature formation without directly transmitting stress to the insulation layer, thereby maintaining layer adhesion while achieving optimal electrical properties.
3Reliability
If the conductive layer volume decreases upon cooling, then the electrical resistance improves, but the separation from the insulation layer increases due to thermal contraction
Solution Approach 1:
The segmented conductive patterns reduce the total volume change upon cooling compared to a continuous layer, distributing the contraction stress across multiple smaller elements. This segmentation prevents the accumulation of contraction forces that would otherwise cause separation from the insulation layer while maintaining electrical functionality.
Solution Approach 2:
The barrier pattern acts as a compliant intermediary that accommodates the volumetric contraction of the conductive layer upon cooling. It allows the conductive layer to shrink and improve electrical resistance without directly pulling away from the rigid insulation layer, thereby maintaining boundary integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces cracks and fractures, resulting in semiconductor devices with improved electrical characteristics and enhanced thermal endurance.
Implementation Method 1
The process for forming the conductive layer may be performed at a high temperature and as the temperature decreases, a volume of the conductive layer may decrease. Thus, the conductive layer and the surrounding insulation layer may be separated from each other due to the difference between coefficients of thermal expansion of the conductive layer and the insulation layer.
Data Source
AI summary
A pattern structure includes a plurality of first patterns and a plurality of second patterns on a substrate. Each of the plurality of first patterns extend in a first direction and are spaced apart from each other in a second direction, i.e., the first direction and the second direction are substantially parallel to an upper surface of the substrate and perpendicular to each other. Each of the plurality of second patterns extend in the first direction and are spaced apart from each other in the second direction. The plurality of first patterns are aligned with each other in the second direction at a first end, and the plurality of second patterns are aligned with each other in the second direction at a second end that is opposite to the first end in the first direction. The plurality of second patterns are aligned with and spaced apart from the plurality of first patterns, respectively, in the first direction to form a plurality of spaces. Each of the plurality of spaces is located between a first pattern of the plurality of first patterns and a second pattern of the plurality of second patterns that is aligned with the first pattern in the first direction. Additionally, each pair of adjacent spaces from the plurality of spaces comprises a first space and a second space that is separated from the first space in the first direction.