Segmented Plasma Chuck for Wafer Etch Uniformity
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Solution Overview
Problem
Conventional capacitively coupled plasma systems lack uniformity in etch rates and deposition rates across the entire wafer, with variations between center and edge areas due to differing neighboring chip configurations.
Innovation Solution
A segmented wafer chuck with a first and second conductive region, each coupled to a distinct RF power generator, allowing for different RF power characteristics to be applied, thereby improving uniformity of deposition and etch rates through controlled RF power distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional single RF power generator is used for the chuck, then the system is simple in structure, but the etch rate uniformity and deposition rate uniformity across the wafer deteriorate due to variations between center and edge areas
Solution Approach 1:
The chuck is divided into multiple conductive regions (first conductive region and second conductive region), each independently coupled to a separate RF power generator. This segmentation allows different RF power characteristics to be applied to different spatial zones of the chuck, thereby compensating for the natural variations in plasma distribution across the wafer surface and improving etch rate and deposition rate uniformity.
Solution Approach 2:
Different conductive regions of the chuck are assigned different RF power characteristics (power, frequency, phase) tailored to the specific requirements of local areas on the wafer. This local quality approach addresses the non-uniform plasma distribution by providing customized power conditions to different zones, ensuring consistent processing outcomes across the entire wafer surface.
2Manufacturing precision
If different RF power characteristics are applied to different regions of the chuck, then the uniformity of etch and deposition rates improves, but the complexity of the power distribution system increases
Solution Approach 1:
The RF power distribution system is segmented into multiple independent channels, with each conductive region of the chuck connected to its own RF power generator. This allows precise control of RF parameters in each zone without requiring complex modulation of a single power source, thereby achieving uniform deposition rates while maintaining manageable system complexity through modular architecture.
3Manufacturing precision
If a single RF power generator is used for the chuck, then the system is easier to operate, but the processing consistency across different chip configurations deteriorates
Solution Approach 1:
The system applies locally optimized RF power characteristics to different conductive regions based on the spatial distribution of chips on the wafer. By tailoring the RF power conditions to match the specific configuration and density of chips in different areas, the system achieves consistent processing outcomes across varied chip layouts while automating the complexity through pre-programmed power distributions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the uniformity of material deposition and etching processes across the wafer by adjusting RF power characteristics, ensuring consistent processing outcomes regardless of chip configurations.
Implementation Method 1
a first conductive region configured to be capacitively coupled to a first RF power generator, a second conductive region configured to be capacitively coupled to a second RF power generator
Implementation Method 2
an insulation region that electrically insulates the first conductive region from the second conductive region
Data Source
AI summary
A chuck, a system including a chuck and a method for making a semiconductor device are disclosed. In one embodiment the chuck includes a first conductive region configured to be capacitively coupled to a first RF power generator, a second conductive region configured to be capacitively coupled to a second RF power generator and an insulation region that electrically insulates the first conductive region from the second conductive region.