Segmented Plasma Source Control for Wafer Uniformity
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Solution Overview
Problem
Achieving high uniformity in plasma processing is challenging due to the complex interplay of various factors such as plasma uniformity, chamber design, wafer temperature distribution, and bias electrode design, which often requires large and expensive equipment.
Innovation Solution
The use of independently controlled plasma sources that can switch between high and low operational modes, allowing for time-dependent exposure of plasma-related fluxes to achieve uniform processing results across a substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If large chamber dimensions and complex temperature control measures are used to achieve high process uniformity, then manufacturing precision is improved, but device complexity and cost increase
Solution Approach 1:
The plasma source is divided into multiple independently controllable elements arranged in an array. Each element can be controlled separately to deliver plasma flux to different regions of the substrate, enabling localized process control without requiring complex chamber-wide uniformity measures
Solution Approach 2:
Different regions of the substrate receive plasma from corresponding plasma source elements with tailored exposure durations. This allows each local region to be optimized for its specific processing requirements, achieving high process uniformity across the entire substrate through localized control rather than global uniformity
2Manufacturing precision
If large plasma volume is used to improve process uniformity, then manufacturing precision is improved, but productivity decreases due to slow chemistry change
Solution Approach 1:
The plasma source is segmented into multiple independently controllable elements. This segmentation allows selective activation of only the plasma elements needed for the current process step, enabling rapid chemistry changes without the delay of filling and emptying a large plasma volume
Solution Approach 2:
The plasma source elements can be activated and deactivated in periodic sequences, allowing rapid switching between different plasma chemistries by simply changing which elements are active. This periodic control enables fast chemistry transitions while maintaining process uniformity through precise timing of plasma exposure
3Manufacturing precision
If complex temperature control measures are implemented to achieve high process uniformity, then manufacturing precision is improved, but device complexity and cost increase
Solution Approach 1:
The plasma source is divided into multiple independently controllable elements. This segmentation enables precise spatial and temporal control of plasma flux delivery to different substrate regions, achieving process uniformity through controlled exposure duration variations rather than complex temperature distribution control
Solution Approach 2:
The system controls the plasma exposure duration parameter for each plasma source element independently. By varying the exposure time parameter rather than adjusting temperature parameters, the system achieves process uniformity with simpler temperature control requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control of plasma exposure times, allowing for compensation of non-uniformities and achieving improved process uniformity without the need for large equipment, thus enhancing processing efficiency and flexibility.
Implementation Method 1
A plasma source includes a plurality of independently addressable controlled elements which may be selectively activated to deliver plasma-related fluxes to a surface of a substrate
Data Source
AI summary
A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.