Segmented Power Module Layout for Selective Switch Burnout
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Solution Overview
Problem
Existing power modules with parallel semiconductor switches face the risk of failure due to a single switch malfunction leading to shutdown of the entire unit, necessitating an efficient method to service and remove faulty switches without damaging others.
Innovation Solution
A power module design with a segmented metallization layer that directs pulsed currents of specific frequencies to individual segments, allowing controlled burning and removal of faulty semiconductor switches by concentrating current flow, thereby transforming the short-circuit condition to an open circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple semiconductor switches are connected in parallel to increase power handling capability, then the power capacity of the switching unit is improved, but the risk of system failure due to a single switch malfunction increases
Solution Approach 1:
The upper metallization layer is divided into multiple separate segments, each corresponding to a specific semiconductor switch. This segmentation allows independent current paths for each switch, enabling selective burning of faulty switches while maintaining operation of healthy switches through controlled pulsed current application at different frequencies.
2Reliability
If a faulty semiconductor switch needs to be removed, then the reliability of the switching unit is improved, but the complexity of servicing and removing individual switches increases
Solution Approach 1:
The metallization layer segments are designed to enable self-service burning of faulty switches. By applying pulsed currents at specific frequencies, the system automatically directs current through the appropriate metallization segment to burn the faulty switch, eliminating the need for complex external servicing equipment or procedures.
Solution Approach 2:
The system utilizes frequency parameter changes in pulsed currents to control which metallization segment conducts current. By varying the frequency, the system can selectively activate different segments, enabling precise control over which switch is burned without affecting others, thereby simplifying the repair process.
3Productivity
If current is concentrated through a single conduction path to burn a faulty switch, then the efficiency of removing faulty components is improved, but the risk of damaging other components increases
Solution Approach 1:
The metallization layer is segmented into electrically isolated sections, each serving a specific semiconductor switch. This segmentation creates independent current paths that confine the high-density pulsed current to only the segment associated with the faulty switch, preventing current from affecting other switches or components.
Solution Approach 2:
Each metallization segment is designed with specific local properties (frequency response characteristics) that allow selective activation. By matching the pulsed current frequency to the resonant frequency of a specific segment, the current is localized to that segment only, enabling precise targeting of the faulty switch without collateral damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates the sequential burning of semiconductor switches, ensuring efficient removal of faulty components while minimizing damage to the system, thus maintaining operational integrity.
Implementation Method 1
The upper metallization layer is configured to provide a conduction path between the first vias and the at least one lower electrical contact of the semiconductor switch. Each segment is configured to form part of the conduction path... a current guided through the conduction path may be focused on one or several of the separate segments, thereby increasing the current through one or several of the segments at a specific time. This allows to facilitate controlled burning of the semiconductor switch by controlled short-circuiting
Data Source
AI summary
A power module has an upper side, a lower side, a plurality of electrical contact pads on the upper side, an insulating layer, an upper metallization layer disposed on the insulating layer, and a semiconductor switch having upper electrical contacts and a lower electrical contact. The semiconductor switch is arranged on the upper metallization layer and the lower electrical contact is electrically connected to the upper metallization layer. The plurality of electrical contact pads includes a first contact pad electrically connected via first vias to the upper metallization layer. The upper metallization layer is configured to provide a conduction path between the first vias and the lower electrical contact of the semiconductor switch. The upper metallization layer is structured to form multiple separate segments, wherein each segment is configured to form part of the conduction path between the first vias and the lower electrical contact of the semiconductor switch.