Segmented Power Module Metallization for Faulty Switch Isolation
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Solution Overview
Problem
In electrical systems with parallel semiconductor switches, the failure of one switch can lead to the shutdown of the entire switching unit, necessitating an efficient method to service and remove faulty semiconductor switches without damaging others.
Innovation Solution
A power module with a segmented metallization layer that guides current through separate segments of specific frequencies, allowing controlled burning of faulty switches by concentrating current on individual segments, transforming them into an open circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If semiconductor switches are connected in parallel to increase current capacity, then the current handling capability is improved, but the risk that failure of one switch leads to failure of the complete switching unit increases
Solution Approach 1:
The metallization layer is divided into multiple separate segments, each forming an independent conduction path to a different semiconductor switch. This segmentation allows individual switches to be isolated and removed without affecting the entire switching unit, as current can be redirected through remaining functional segments and switches.
2Ease of repair
If a faulty semiconductor switch needs to be removed, then system maintenance is improved, but uncontrolled burning may cause massive heat development and damage to other components occurs
Solution Approach 1:
The metallization layer is divided into multiple separate segments that can be individually activated. This allows controlled burning of only the segment containing the faulty switch by applying current through that specific segment, while other segments remain inactive and protect adjacent functional switches from thermal damage.
Solution Approach 2:
Different segments of the metallization layer are designed with different properties (such as width variations) to control current distribution. By selecting which segment to activate, the current density and burning effect can be localized precisely to the faulty switch's segment, preventing uncontrolled heat spread to other areas.
3Measurement precision
If current is concentrated on one segment to burn a faulty switch, then the precision of fault isolation is improved, but the complexity of current control increases
Solution Approach 1:
The metallization layer is divided into multiple separate segments, each forming an independent conduction path to a different semiconductor switch. This segmentation allows individual switches to be isolated and removed without affecting the entire switching unit, as current can be redirected through remaining functional segments and switches.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient removal of faulty semiconductor switches by sequential burning, preventing massive heat development and maintaining system functionality.
Implementation Method 1
The upper metallization layer is configured to provide a conduction path between the first vias and the at least one lower electrical contact of the semiconductor switch
Implementation Method 2
a current guided through the conduction path can be focused on one or several of the separate segments, thereby increasing the current through one or several of the segments at a specific time. This allows to facilitate controlled burning of the semiconductor switch
Data Source
Figure 1
Figure 2
Figure 2A
AI summary
A power module (2) has: an upper side (21) and a lower side (22), a plurality of electrical contact pads (42) on the upper side (21), an insulating layer (231), an upper metallization layer (232) disposed on the insulating layer (231), and a semiconductor switch (24) having upper electrical contacts (241, 242) and a lower electrical contact (243), wherein the semiconductor switch (42) is arranged on the upper metallisation layer (232), wherein the lower electrical contact (243) is electrically connected to the upper metallization layer (232), wherein the plurality of electrical contact pads (42) comprises a first contact pad (425) which is electrically connected via first vias (421) to the upper metallization layer (232) and second and third contact pads (426, 427) which are connected to the upper electrical contacts (241, 242) of the semiconductor switch (24), and wherein the upper metallization layer (232) is configured to provide a conduction path (6) between the first vias (421) and the lower electrical contact (243) of the semiconductor switch (24). It is further provided that the upper metallisation layer (232) is structured to form multiple separate segments (611-616; 621-627; 631-637; 641-647; 651-653), wherein each segment (611-616; 621-627; 631-637; 641-647; 651-653) is configured to form part of the conduction path (6) between the first vias (421) and the lower electrical contact (243) of the semiconductor switch (24).