Segmented RF Ion Trap Layout for Higher Qubit Integration

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Solution Overview

Problem

Existing ion-trap devices face spatial constraints as the number of integrated elements increases, necessitating a solution to enhance the area requirement for accommodating more qubits and improve the performance of quantum computers by increasing the number of integrated circuits and reducing the spatial constraints in future ion traps with increasing number of integrated elements.

Innovation Solution

A device for trapping charged atomic objects comprising a substrate with segmented RF electrodes and DC electrodes, where the RF electrodes are segmented to create spaces for DC electrodes and optical elements, allowing for more efficient use of space and reducing the overlap of metal in RF/DC crossings.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the number of integrated elements (RF electrodes, DC electrodes, optical elements) is increased to support more qubits, then the functionality and performance of the ion trap device is improved, but the area requirement and spatial constraints increase

Engineering Contradiction:
Improvenumber of integrated elementsVSAvoidarea requirement
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The RF electrode is divided into multiple separate RF segments arranged on the substrate surface. This segmentation creates gaps between adjacent RF segments that can be utilized to position DC electrodes and optical elements, thereby increasing the number of integrated elements without proportionally increasing the overall device area.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent utilizes the three-dimensional space by positioning RF segments, DC electrodes, and optical elements at different vertical levels and spatial arrangements on the substrate. This multi-dimensional integration allows more elements to be accommodated within the same footprint area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If RF electrodes are made continuous to maintain simple structure, then the device complexity is reduced, but the space available for DC electrodes and optical elements is minimized

Engineering Contradiction:
Improvestructure simplicityVSAvoidspace for integrated elements
Core Design Contradiction:
Device complexityVSArea of stationary object

Solution Approach 1:

The RF electrode structure is segmented into discrete segments rather than being continuous. This segmentation intentionally creates spaces between segments that serve as functional areas for placing DC electrodes and optical elements, transforming the complexity of segmented structure into a benefit for increased integration capability.

Inventive Principle:
Principle #1Segmentation

3Productivity

If the number of qubits is increased to improve quantum computing performance, then the computational capability is enhanced, but the spatial constraints and error rates increase

Engineering Contradiction:
Improvenumber of controllable qubitsVSAvoiderror rate
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

By segmenting the RF electrode into separate segments with gaps between them, the patent creates dedicated spaces for additional DC electrodes and optical elements. This enables more qubits to be trapped and controlled within the same device footprint, improving the number of controllable qubits while maintaining manageable error rates through optimized spatial arrangement.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides a more efficient use of space in ion-trap devices, enabling the integration of additional elements without compromising the functionality of the ion trap, thereby supporting the development of larger quantum computers with improved error rates and scalability.

Implementation Method 1

RF electrodes for generating a RF potential for trapping at least one ion along a trap axis

Methodology Applied
Scientific EffectElectromagnetic fields: Electric Field

Implementation Method 2

DC electrodes for generating a DC potential

Methodology Applied
Scientific EffectElectrostatic potential: Electric Field

Data Source

PatentUS20250385020A1Device for trapping charged atomic objects
Publication Date: 2025.12.18 INFINEON TECH AUSTRIA AG
  • US20250385020A1 patent drawing
  • US20250385020A1 patent drawing
  • US20250385020A1 patent drawing

AI summary

A device for trapping charged atomic objects includes: a substrate having a first major surface; at least one radio frequency (RF) electrode configured to generate an RF potential for trapping at least one ion along a trap axis, the at least one RF electrode including a plurality of RF segments arranged on the first major surface of the substrate, the plurality of RF segments being at least partly separated on the first major surface of the substrate; and a plurality of direct current (DC) electrodes configured to generate a DC potential.