Segmented RF Electrode Wafer Support for High-Temperature Reliability

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Solution Overview

Problem

Wafer support devices face challenges in reliability at high temperatures due to thermal stress and local heat generation from RF electrodes in semiconductor manufacturing, requiring a solution that addresses thermal expansion and power distribution issues.

Innovation Solution

A wafer support device with a dielectric substrate and RF electrodes divided into zone electrodes, connected by a short-circuit member and a main power supply rod, which includes power supply pins and a short-circuit electrode to distribute power uniformly and reduce stress, along with a heater electrode and electrostatic adsorption capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a single RF electrode is used for plasma generation, then the structure is simple, but local heat generation causes damage and reliability decreases at high temperatures

Engineering Contradiction:

Improvereliability at high temperatureVSAvoidelectrode structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The RF electrode is divided into multiple zone electrodes arranged in a planar direction, with each zone electrode independently connected to the power supply rod through the short-circuit member. This segmentation distributes the RF power input across multiple zones, preventing local heat concentration and improving reliability at high temperatures while maintaining a manageable structural complexity through modular design

Inventive Principle:

Principle #1Segmentation

2Power

If high electric power is input to RF electrodes for high temperature processing, then plasma generation efficiency improves, but local heat generation damage increases

Engineering Contradiction:

Improveelectric power input to RF electrodeVSAvoidlocal heat generation damage

Core Design Contradiction:

PowerVSObject-affected harmful factors

Solution Approach 1:

The RF electrode is segmented into multiple zone electrodes that are spatially distributed in the planar direction. Each zone electrode receives power through the short-circuit member structure, which allows high total power input while distributing the power density across multiple locations, thereby preventing local heat generation damage while maintaining high plasma generation efficiency

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The zone electrodes are arranged to provide different local plasma generation characteristics across the substrate surface. By controlling the power distribution to each zone electrode through the short-circuit member, the system achieves uniform plasma generation across different regions, preventing localized overheating while maintaining high overall power utilization

Inventive Principle:

Principle #3Local quality

3Manufacturing precision

If the RF electrode is divided into multiple zone electrodes, then power distribution uniformity improves, but the number of connections and structural complexity increases

Engineering Contradiction:

Improvepower distribution uniformityVSAvoidnumber of connections

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

Multiple zone electrodes are electrically connected through a common short-circuit member that is integrated with the power supply rod. This merging approach allows multiple zone electrodes to share a unified connection structure, achieving uniform power distribution across all zones while minimizing the number of separate connections and reducing overall structural complexity compared to individual connections for each zone electrode

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides a highly reliable wafer support device capable of withstanding high temperatures, preventing damage from thermal stress and power concentration, and ensuring uniform plasma distribution and wafer adsorption.

Implementation Method 1

an RF electrode for plasma generation

Methodology Applied

Scientific EffectPlasma generation: Plasma

Implementation Method 2

RF electrode for plasma generation

Methodology Applied

Scientific EffectRadio frequency heating: Dielectric Heating

Implementation Method 3

heater electrode

Methodology Applied

Scientific EffectResistive heating: Joule Heating

Implementation Method 4

electrostatic adsorption electrode

Methodology Applied

Scientific EffectElectrostatic adsorption: Electrostatics

Data Source

PatentUS20240429032A1Wafer support device

Publication Date: 2024.12.26 SUMITOMO OSAKA CEMENT CO LTD

AI summary

A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.