Segmented Seal Ring Structure for Semiconductor Noise Isolation
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Solution Overview
Problem
The increased integration density of electronic components in semiconductor devices leads to significant noise coupling between the seal ring and integrated circuits, resulting in signal delays, logic errors, and IC malfunctions, which existing seal ring designs fail to adequately address.
Innovation Solution
A dielectric structure is formed in the seal ring area using a CPODE pattern, filling a trench created by removing dummy material and insulating features, which reduces the noise coupling path without requiring additional masks, maintaining manufacturing quality and protecting against moisture and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density of electronic components is increased, then productivity and device functionality are improved, but noise coupling between seal ring and IC increases causing signal delays and logic errors
Solution Approach 1:
The seal ring structure is segmented into multiple portions with gaps between them, breaking the continuous conductive path that causes noise coupling. This segmentation maintains the protective functions of the seal ring while eliminating the noise coupling path between the seal ring and the integrated circuit.
Solution Approach 2:
The conductive material is selectively removed from specific portions of the seal ring to extract the harmful noise coupling function while retaining the protective functions. This creates gaps in the seal ring that prevent noise transmission while maintaining structural integrity and protective capabilities.
2Reliability
If seal ring is formed as continuous interconnected structure, then protective function against moisture and contamination is improved, but noise coupling path is created affecting IC performance
Solution Approach 1:
The continuous seal ring is divided into multiple segments with gaps between them. Each segment maintains the protective barrier function against moisture and contamination, while the gaps interrupt the noise coupling path to the integrated circuit.
Solution Approach 2:
Different portions of the seal ring structure have different properties: the seal ring portions provide protective continuity, while the gaps provide noise isolation. This local differentiation allows simultaneous achievement of protective reliability and noise reduction.
3Reliability
If multiple seal rings are fabricated to ensure stability, then reliability is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The noise reduction function is merged into the seal ring structure itself by creating gaps in the seal ring portions. This combines the protective function of the seal ring with the noise isolation function, eliminating the need for separate noise isolation structures.
Solution Approach 2:
The modified seal ring structure performs multiple functions simultaneously: it provides moisture and contamination protection while also serving as a noise isolation barrier. This multi-functionality reduces the need for additional separate structures.
4Object-generated harmful factors
If lateral opening is formed in seal ring to cut noise path, then noise coupling is reduced, but protective function against moisture and contamination is compromised
Solution Approach 1:
The seal ring structure is designed with local quality variations where gaps are strategically positioned to interrupt noise paths while maintaining continuity in regions critical for moisture and contamination protection. This allows differential optimization of noise isolation and protective functions.
Solution Approach 2:
The noise isolation is achieved not by creating openings that compromise the seal, but by modifying the conductive material distribution within the seal ring structure. The gaps are formed in a way that affects electrical noise transmission while maintaining the physical barrier against moisture and contamination.
Data Source
AI summary
A method includes forming parallel first and second dummy materials in an alternating manner. The method further includes etching portions of the first and second dummy materials, using respective selective etches, to form a plurality of gaps. The method further includes filling a first gap of the plurality of gaps with a dielectric material. The method further includes filling a second gap of the plurality of gaps with a conductive material.