Segmented Shielding Plates for SiC Crystal Growth Gas Flow

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Solution Overview

Problem

Large-diameter shielding members used in SiC crystal growth inhibit the flow of source material gas, hindering homogeneous crystal growth and temperature difference generation between the source material and growth surface.

Innovation Solution

A shielding member comprising a plurality of shielding plates arranged without gaps in a plan view, with gaps between them serving as a flow path for the source material gas, and optionally featuring a connection part and support part, with inclined or bent surfaces to curb radiation and ensure uniform gas flow.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a large-diameter shielding member is used to produce large-size SiC ingot, then the shielding member can cover the growth surface, but the source material gas flow is inhibited and homogeneous crystal growth is hindered

Engineering Contradiction:
Improveshielding member diameterVSAvoidsource material gas supply
Core Design Contradiction:
Area of stationary objectVSQuantity of substance

Solution Approach 1:

The shielding member is divided into multiple shielding plates arranged in an annular shape with gaps between them. This segmentation allows the shielding member to maintain a large diameter for covering the growth surface while the gaps enable source material gas to flow through to the central region, resolving the contradiction between shielding coverage and gas supply.

Inventive Principle:
Principle #1Segmentation

2Object-affected harmful factors

If a large-diameter shielding member is used, then radiation from source material to growth surface is reduced, but source material gas becomes more difficult to supply to central part of growth surface

Engineering Contradiction:
Improveradiation from source materialVSAvoidgas flow to central part
Core Design Contradiction:
Object-affected harmful factorsVSEase of operation

Solution Approach 1:

The annular shielding member is segmented into multiple plates with gaps between them. These gaps create flow paths that allow source material gas to reach the central region of the growth surface while the overall annular structure continues to block radiation from the source material to the growth surface.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The shielding member has different properties in different regions: the annular plates provide radiation shielding in the peripheral regions, while the gaps between plates provide gas flow paths toward the central region. This local differentiation of function resolves the contradiction between radiation blocking and gas supply.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Efficiently supplies source material gas to the growth surface while reducing radiation, allowing for a temperature difference generation and facilitating large-size SiC wafer production.

Implementation Method 1

a single crystal of a source material is grown on a crystal installed in the crystal installation part by subliming the source material from the source material accommodation part

Methodology Applied
Scientific EffectSublimation: Sublimation

Implementation Method 2

The shielding member curbs radiation from the source material to the growth surface, and therefore a temperature difference is generated between the source material and the growth surface

Methodology Applied
Scientific EffectRadiation: Radiation

Data Source

PatentUS11041257B2Shielding member including a plurality of shielding plates arranged without gaps therebetween in plan view and apparatus for growing single crystals
Publication Date: 2021.06.22 RESONAC CORP
  • US11041257B2 patent drawing
  • US11041257B2 patent drawing
  • US11041257B2 patent drawing

AI summary

A shielding member includes a plurality of shielding plates, in which the plurality of shielding plates are arranged without gaps therebetween in a plan view from a crystal installation part, and the shielding member is disposed between a source material accommodation part and the crystal installation part, in an apparatus for growing single crystals, wherein the apparatus includes a container for crystal growth that has the source material accommodation part at an inner bottom part, and has the crystal installation part that faces the source material accommodation part, and includes a heating part that is configured to heat the container for crystal growth, in which a single crystal of the source material is grown on a crystal installed in the crystal installation part by subliming the source material from the source material accommodation part.