Segmented Silicide Fuse for Low-Current OTP Programming
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Solution Overview
Problem
Existing one-time programmable (OTP) devices face challenges in shrinking technology nodes and low-power applications due to high programming currents required for fuse elements, leading to obstacles in transistor size reduction and power efficiency.
Innovation Solution
The OTP device incorporates a fuse element with a silicon-containing line and silicide portions separated by a predetermined distance, allowing for a lower programming current to blow out the fuse, reducing transistor size and power consumption while maintaining high resistance differences for logic states.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high programming current is used to blow out the fuse element, then the fuse can be reliably programmed, but the transistor size must be large and power consumption increases
Solution Approach 1:
The fuse element is segmented into two distinct portions: a first fuse portion made of silicide material and a second fuse portion made of non-silicide conductive material. This segmentation allows each portion to contribute differently to the programming process, enabling reliable fuse blowing at lower currents by utilizing the specific properties of each material segment.
Solution Approach 2:
The fuse element employs composite materials by combining silicide material (first fuse portion) with non-silicide conductive material (second fuse portion). This composite structure leverages the high melting point and stability of silicide while using the lower melting point non-silicide material to facilitate blowing at reduced currents, thereby resolving the contradiction between reliability and power consumption.
2Reliability
If high programming current is used to blow out the fuse element, then the fuse can be reliably programmed, but the transistor size must be large
Solution Approach 1:
The fuse element is segmented into two distinct portions: a first fuse portion made of silicide material and a second fuse portion made of non-silicide conductive material. This segmentation allows each portion to contribute differently to the programming process, enabling reliable fuse blowing at lower currents by utilizing the specific properties of each material segment.
Solution Approach 2:
The fuse element employs composite materials by combining silicide material (first fuse portion) with non-silicide conductive material (second fuse portion). This composite structure leverages the high melting point and stability of silicide while using the lower melting point non-silicide material to facilitate blowing at reduced currents, thereby resolving the contradiction between reliability and power consumption.
3Ease of manufacture
If conventional fuse structure is used, then the device can be manufactured with standard processes, but the cell size is large and power consumption is high
Solution Approach 1:
The invention changes the material parameters of the fuse element by introducing a dual-material structure with different melting points and electrical properties. This parameter change enables the fuse to achieve the same programming function with smaller dimensions and lower power consumption while remaining compatible with existing semiconductor manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves a 70% reduction in cell size and 95% reduction in programming current, enabling high-density applications without area sacrifice and supporting low-power products.
Implementation Method 1
passing an electrical current of a sufficient magnitude to cause melting or agglomeration, thereby creating a more resistive path or an open circuit
Data Source
AI summary
A method of forming a device includes forming a silicon-containing line continuously extending between a first node and a second node. A first silicide-containing portion and a second silicide-containing portion are formed over the silicon-containing line. The first silicide-containing portion is separated from the second silicide-containing portion by a predetermined distance, and the predetermined distance is substantially equal to or less than a length of the silicon-containing line.


