Segmented Susceptor Heating for Silicon Ingot Temperature Uniformity

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Solution Overview

Problem

In the continuous Czochralski method for growing ingots, ensuring the uniformity of the temperature of molten silicon while reducing power energy costs remains a challenge.

Innovation Solution

The apparatus includes a growth furnace with a main crucible surrounded by a susceptor with multiple heating members that are electrically insulated and heated through electromagnetic induction by a magnetic field, ensuring uniform temperature and efficient energy use.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the crucible is heated through electrical energy to secure the target temperature distribution of molten silicon, then the uniformity of temperature is improved, but power energy costs increase

Engineering Contradiction:
Improveuniformity of temperature of molten siliconVSAvoidpower energy costs
Core Design Contradiction:
TemperatureVSUse of energy by stationary object

Solution Approach 1:

The susceptor is divided into multiple heating members (first heating member, second heating member, third heating member) that are electrically insulated from each other. Each heating member can be independently controlled to generate heat through electromagnetic induction, allowing segmented temperature control in different regions of the crucible to achieve uniform molten silicon temperature while optimizing energy distribution

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent replaces direct electrical heating of the crucible with electromagnetic induction heating through the susceptor. The heater generates a magnetic field that induces eddy currents in the conductive susceptor, which then generates heat through resistive heating. This substitution improves energy efficiency by directly heating the susceptor rather than heating the crucible indirectly through electrical resistance

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Temperature

If multiple heating members are used to improve temperature uniformity, then device complexity increases

Engineering Contradiction:
Improveuniformity of temperature of molten siliconVSAvoidstructure of heating system
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

Multiple heating members are integrated into a single susceptor structure that surrounds the crucible. The first, second, and third heating members are positioned at different locations (side surface, upper end, and lower end respectively) but are combined into one cohesive susceptor assembly, reducing overall device complexity while maintaining the ability to provide uniform heating

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The susceptor acts as an intermediary between the heater and the crucible. Instead of directly heating the crucible with multiple independent heating elements, the patent uses the susceptor as a mediating component that receives electromagnetic energy and distributes heat uniformly to the crucible, simplifying the heating system architecture

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution ensures the uniformity of the temperature of molten silicon, thereby improving the yield of single crystal ingots and reducing power energy costs by increasing the efficiency of heating the crucible.

Implementation Method 1

a heater which generates a magnetic field and heats the plurality of heating members through electromagnetic induction by the magnetic field

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 2

each of the plurality of heating members individually generates current by electromagnetic induction to generate heat

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS12338542B2Ingot growing apparatus
Publication Date: 2025.06.24 HANWHA SOLUTIONS CORP
  • US12338542B2 patent drawing
  • US12338542B2 patent drawing
  • US12338542B2 patent drawing

AI summary

An ingot growing apparatus is disclosed. An ingot growing apparatus according to an embodiment of the present invention comprises: a growth furnace in which a main crucible for receiving molten silicon in order to grow an ingot is disposed; a susceptor formed so as to surround the outer surface of the main crucible and including a plurality of heating members which are electrically insulated from each other; and a heater which generates a magnetic field and heats the plurality of heating members through electromagnetic induction by the magnetic field, wherein the plurality of heating members form loops along the outer surface of the main crucible.