Segmented Thin Film Transistor Active Region for Display Repair
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Solution Overview
Problem
In display substrates, impurity particles between the active region and gate insulating layer or defects in the gate insulating layer can cause short circuits in thin film transistors, leading to display line defects, which existing repair designs fail to adequately address.
Innovation Solution
A thin film transistor design with an active region, a gate insulating layer, and a gate, featuring multiple connection regions between electrode contact regions, where each pair of adjacent connection regions is spaced by an opening, allowing for the disconnection of short-circuited connection regions to prevent display line defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional thin film transistor structure with continuous active region is used, then the transistor can provide continuous current conduction path, but impurity particles or gate insulating layer defects cause short circuit between gate and active region leading to display line defects
Solution Approach 1:
The active region is divided into multiple discrete connection regions (first connection region, second connection region, third connection region) separated by openings. This segmentation breaks the continuous current conduction path into discrete segments, allowing individual connection regions to be isolated if one becomes short-circuited, thereby preventing display line defects while maintaining overall transistor functionality.
2Ease of repair
If multiple connection regions with openings are introduced to enable disconnection of short-circuited regions, then repairability is improved, but the device structure becomes more complex
Solution Approach 1:
The active region is segmented into multiple connection regions with openings between them, enabling selective disconnection of defective regions. This segmentation provides repairability by allowing individual connection regions to be isolated, while the overall structure remains relatively simple and manufacturable.
Solution Approach 2:
The openings between connection regions serve as intermediary spaces that can be filled with insulating materials or left empty. These intermediaries provide physical separation and electrical isolation between connection regions, enabling the disconnection function without requiring complex additional components or structures.
Data Source
AI summary
A thin film transistor, a display substrate and a method for repairing the same, and a display device are provided. The thin film transistor includes: an active region, a gate insulating layer disposed on a side of the active region, and a gate disposed on a side of the gate insulating layer distal to the active region, and the active region includes a first electrode contact region at one end of the active region, a second electrode contact region at the other end of the active region, and a plurality of connection regions between the first electrode contact region and the second electrode contact region, and each of the plurality of connection regions is coupled to the first electrode contact region and the second electrode contact region, and every two adjacent connection regions are provided with an opening therebetween and are spaced apart from each other by the opening.