Deep Doped Semiconductor Regions via Segmented Trench Implantation
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Solution Overview
Problem
Current methods for producing doped semiconductor regions that extend deep into a semiconductor body are either expensive or inefficient, particularly for superjunction transistors and JFETs, as they require complex epitaxy processes or wide trenches.
Innovation Solution
A method involving forming a trench in a semiconductor body, implanting impurity atoms into the trench bottom, extending the trench deeper, and further implanting atoms into the extended trench bottom, with optional scattering layers and multiple implantation steps to achieve deep doped regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If a multiple epitaxy process is used to produce compensation regions deep into the semiconductor body, then the doping depth is improved, but the manufacturing cost increases
Solution Approach 1:
The patent divides the deep doping process into multiple shallow implantation steps. Instead of attempting to dope the entire depth in one complex epitaxy process, the method segments the process into sequential implantation steps at different depths, with each step being simpler and more cost-effective than the alternative single-step deep doping approach.
2Length of stationary object
If a wide trench is used to form a deep source region in a JFET, then the doping depth is improved, but the device area increases
Solution Approach 1:
The patent transitions from a lateral approach (wide trench) to a vertical approach (deep narrow trench). By extending the trench depth in the vertical dimension rather than increasing the trench width in the lateral dimension, the method achieves deep doping while maintaining a compact device footprint.
3Length of stationary object
If a deep trench is formed to implant dopant atoms deep into the semiconductor body, then the doping depth is improved, but the trench width must increase
Solution Approach 1:
The patent segments the trench formation and doping process into multiple stages. Instead of forming one extremely deep and wide trench, the method creates a series of progressively deeper trenches, each with manageable dimensions, allowing deep doping without requiring an excessively large trench cross-section.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method efficiently forms doped regions that extend several micrometers deep into the semiconductor body, providing a cost-effective and efficient alternative to existing techniques by enabling precise control over doping profiles and region formation.
Implementation Method 1
implanting impurity atoms into a bottom of the trench
Data Source
AI summary
A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a bottom of the deeper trench.