Segmented TRIAC Structure for High Commutating Capability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current TRIAC semiconductor devices suffer from low commutability and operational deficiencies due to their single gate control mechanism, which limits their ability to effectively manage current flow in all quadrants.
Innovation Solution
The design incorporates a trench and isolation region in a TRIAC semiconductor device, separating it into two portions with distinct biasing conditions, allowing for separate current routing and preventing charge carrier migration between them, thereby enhancing commutating capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gate control mechanism is used in TRIAC devices, then the device structure is simple, but the commutating capability is low
Solution Approach 1:
The patent divides the TRIAC device into two separate portions (first and second portions) with distinct gate terminals (first gate and second gate). Each portion can be independently controlled, enabling separate current routing and improved commutating capability. The trench structure physically separates the two portions while maintaining electrical isolation through the isolation region.
2Ease of manufacture
If a single gate control is used, then the device is easier to manufacture, but operational efficiency is limited
Solution Approach 1:
The device is segmented into two independently controllable portions, each with its own gate terminal. This allows separate current routing and enhanced operational efficiency while maintaining a manufacturing process that integrates well with existing semiconductor fabrication techniques through the use of trenches and isolation regions.
Solution Approach 2:
Each portion of the device has distinct local characteristics with separate gate controls, allowing optimized current management in different regions. The first portion can be controlled by the first gate while the second portion is controlled by the second gate, enabling independent optimization of each region's operational characteristics.
3Reliability
If portions are separated with trenches and isolation regions, then commutating capability increases, but device complexity increases
Solution Approach 1:
The device is divided into two portions separated by a trench structure with isolation regions extending from the trench to the third silicon layer. This physical segmentation enables independent control and improved commutating capability while using standard semiconductor fabrication techniques to manage the added structural complexity.
Data Source
AI summary
A semiconductor apparatus including first, second, and third silicon layers, the first silicon being coupled to the second silicon layer and the second silicon layer being coupled to the third silicon layer. The apparatus includes a trench formed in the first silicon layer and in at least a portion of the second silicon layer, an isolation region formed in at least the second silicon layer, where the isolation region extends from the trench to the third silicon layer. The apparatus also includes a first main terminal one and a first gate terminal coupled to a first portion of the first silicon layer, a second main terminal one and a second gate terminal coupled to a second portion of the first silicon layer, a main terminal two coupled to the third silicon layer, and one or more silicon regions in the first silicon layer and in the third silicon layer.