Segmented Voltage Divider Circuit for Fast Internal Reference Setting
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Solution Overview
Problem
Semiconductor memory devices face challenges in achieving reduced chip size and low power consumption while maintaining high data reliability and memory access speed, requiring a wider variation of circuit component sizes and internal voltages, which existing technologies struggle to efficiently manage.
Innovation Solution
Incorporating a voltage dividing circuit with a configuration of resistors and selector switches within an internal voltage generating circuit, allowing for selective switching of resistors to provide various internal reference potentials, thereby optimizing voltage distribution and reducing resistance values for efficient power management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the chip size is reduced and power consumption is lowered, then the circuit component size variation increases, but the management of internal voltages becomes more difficult
Solution Approach 1:
The voltage dividing circuit is segmented into multiple resistor units (first resistor unit, second resistor unit, etc.) that can be independently controlled. Each resistor unit can be selectively switched to provide different resistance values, enabling fine-grained adjustment of internal voltages to match the varied component size requirements in reduced-chip-size designs.
Solution Approach 2:
The voltage dividing circuit incorporates selector switches that dynamically adjust the resistance values by switching between different resistor units. This dynamic adjustability allows the internal voltage generating circuit to adapt to different operating conditions and component variations, simplifying voltage management despite the increased complexity from reduced chip size.
2Reliability
If various internal voltages are provided to support wider circuit component size variation, then the voltage distribution complexity increases, but the data reliability and memory access speed can be maintained
Solution Approach 1:
The voltage dividing circuit serves multiple functions: it generates various internal reference voltages, adjusts resistance values dynamically, and adapts to different operating conditions. This multi-functionality allows a single circuit to handle diverse voltage requirements for different circuit components, maintaining data reliability and memory access speed without proportionally increasing voltage distribution complexity.
3Speed
If resistance values are reduced for faster reference potential setting, then the power consumption may increase, but the memory access speed is improved
Solution Approach 1:
The circuit dynamically changes resistance parameters by switching between different resistor units based on operating conditions. During high-speed operations, lower resistance values are selected to enable faster reference potential setting and improve memory access speed. During low-activity periods, higher resistance values can be selected to reduce power consumption, thus optimizing the trade-off between speed and energy usage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables faster reference potential setting with reduced resistance values, supporting high-speed operations and stable voltage distribution, suitable for memory devices like DRAM, while minimizing chip size and power consumption.
Implementation Method 1
an internal voltage generating circuit including a voltage dividing circuit
Data Source
AI summary
According to one or more embodiments of the disclosure, an apparatus comprising a voltage dividing circuit is provided. The voltage dividing circuit includes a first resistor unit, a second resistor unit parallel to the first resistor unit in a first direction, and a bridge. The bridge is between the first resistor unit and the second resistor unit and links a first middle portion of the first resistor unit to a second middle portion of the second resistor unit. The first and second middle portions are middle portions of the first and the second resistor units in a second direction perpendicular to the first direction.