Segmented Wafer Heater for Uniform Thermal Control

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Solution Overview

Problem

Heaters used for large-diameter semiconductor wafers face challenges with thermal stress, warpage, and reduced positioning accuracy, leading to non-uniform heating and increased maintenance needs due to their large size and thermal expansion.

Innovation Solution

A heater design featuring multiple elements arranged rotationally symmetrically around a shaft, with electrodes and wiring components that allow for stable and uniform heating by maintaining a constant distance between elements, reducing thermal stress and warpage, and enabling precise temperature control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a large-diameter heater is used to heat large-diameter wafers, then the heating area is increased, but thermal stress and warpage increase causing damage and reduced positioning accuracy

Engineering Contradiction:
Improveheating areaVSAvoidheater stability
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The heater is divided into multiple independent heating elements arranged in a circular pattern around the wafer center. Each element can be independently controlled and positioned, allowing the large heating area to be achieved while maintaining individual element stability and reducing overall thermal stress and warpage.

Inventive Principle:
Principle #1Segmentation

2Area of stationary object

If heater elements are made larger to cover large-diameter wafers, then the heating coverage is improved, but positioning accuracy deteriorates due to warpage

Engineering Contradiction:
Improveheating coverageVSAvoidpositioning accuracy
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The heater is segmented into multiple smaller heating elements rather than using a single large element. This segmentation allows each element to maintain dimensional stability and positioning accuracy while collectively providing coverage for large-diameter wafers through their distributed arrangement.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The heating elements are arranged in a circular pattern around the wafer center, transitioning from a single-plane large element to a multi-dimensional circular configuration. This dimensional change allows coverage of large wafer areas while maintaining precise positioning of individual elements through radial and angular placement.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Device complexity

If a single large heater element is used, then the structure is simple, but thermal stress causes damage and increased maintenance

Engineering Contradiction:
Improveheater structureVSAvoidthermal stress resistance
Core Design Contradiction:
Device complexityVSStrength

Solution Approach 1:

The heater is divided into multiple independent elements that can expand and contract independently under thermal stress. This segmentation distributes thermal stress across multiple smaller units rather than concentrating it in a single large element, preventing damage and reducing maintenance requirements.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design ensures uniform film thickness and reduced maintenance frequency by minimizing thermal stress and warpage, while allowing for high-precision temperature control and stable production of large-diameter heaters.

Implementation Method 1

heating the wafer by causing a heater to generate heat through voltage application from an electrode provided at each center portion of elements forming the heater

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Implementation Method 2

heater members made of SiC, for example, thermally expand. Stress is put on fixed portions due to thermal stress

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS8610034B2Heater, manufacturing apparatus for semiconductor device, and manufacturing method for semiconductor device
Publication Date: 2013.12.17 NUFLARE TECH INC
  • US8610034B2 patent drawing
  • US8610034B2 patent drawing
  • US8610034B2 patent drawing

AI summary

A heater for heating a wafer includes elements that are arranged at a distance from one another in a rotationally symmetrical fashion with respect to a shaft extending through a center of the wafer, an electrode being provided to each of the elements to heat the wafer uniformly.