Segmented Wall Structure for Uniform Stacked Gate Memory Cells
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Solution Overview
Problem
As semiconductor devices become increasingly integrated, there is a need to reduce dimensions while enhancing memory cell reliability and lowering production costs, which existing technologies have not adequately addressed.
Innovation Solution
A non-volatile memory device is manufactured with a non-continuous wall structure surrounding stacked gate structures, utilizing a conductive layer between segmented portions to maintain uniform thickness and prevent re-flow of materials during etching, thereby ensuring consistent cell formation and reducing the risk of active area damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If continuous wall structure is used to surround stacked gate structure, then structural integrity is maintained, but material re-flow during etching occurs causing non-uniform thickness and active area damage
Solution Approach 1:
The wall structure is divided into segmented portions rather than forming a continuous structure. The conductive layer is disposed between these segmented portions, creating discrete wall segments that prevent material re-flow during etching while maintaining structural integrity. This segmentation resolves the contradiction by allowing each segment to maintain uniform thickness independently.
Solution Approach 2:
A conductive layer is introduced as an intermediary element between the segmented portions of the wall structure. This conductive layer serves multiple functions: it prevents material re-flow during etching, maintains uniform thickness across the wall structure, and provides electrical connectivity. The intermediary layer resolves the contradiction between structural integrity and thickness uniformity.
2Manufacturing precision
If additional masks or processes are used to prevent active area damage, then manufacturing precision is improved, but device complexity and production cost increase
Solution Approach 1:
The conductive layer performs multiple functions simultaneously: it acts as a barrier to prevent material re-flow, provides electrical connectivity between memory cells, and serves as a structural support element. This multi-functionality resolves the contradiction by eliminating the need for additional masks or processes while maintaining manufacturing precision and protecting the active area.
Solution Approach 2:
The wall structure and conductive layer are combined into an integrated structure where the conductive layer is disposed between the segmented portions of the wall. This merging of functions into a single integrated structure prevents active area damage without requiring additional masks or processes, thereby reducing device complexity while maintaining manufacturing precision.
Data Source
AI summary
A manufacturing method of a semiconductor device includes the following steps. A substrate is provided. A multilayer over the substrate is formed. The multilayer is patterned, to form a plurality of stacks and a stacked gate structure, the stacks arranged along both a first direction and a second direction perpendicular to the first direction, wherein the stacks are extended continuously along the first direction and segmented in the second direction. A first conductive layer is formed between segmented portions of the stacks along the second direction.