Memory Select Transistor Voltage Control via Threshold Monitoring
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Solution Overview
Problem
Existing memory devices face challenges in efficiently managing the operating voltage of select transistors based on threshold voltage distributions, leading to potential program status failures and read disturb phenomena during operations.
Innovation Solution
A memory device and method that monitor the threshold voltage distribution of select transistors and adjust the operating voltage accordingly, reducing the voltage when a majority of transistors are in a lower threshold range and increasing it when in an upper range, to optimize operations and prevent failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a fixed operating voltage is applied to all select transistors, then the device structure and control logic remain simple, but program status failures and read disturb phenomena occur due to threshold voltage distribution variations
Solution Approach 1:
The patent implements dynamic adjustment of operating voltages for select transistors based on their threshold voltage characteristics. The control logic dynamically selects from multiple voltage levels (e.g., first operating voltage, second operating voltage) applied to different select transistor groups, transforming the static voltage application into a dynamic, adaptive system that responds to actual device conditions, thereby resolving the contradiction between reliability and complexity
Solution Approach 2:
The patent changes the operating voltage parameter of select transistors based on their threshold voltage distribution. By monitoring threshold voltages and adjusting the operating voltage parameter accordingly (applying higher voltage to transistors with lower threshold voltage and lower voltage to transistors with higher threshold voltage), the system optimizes memory operation reliability while managing complexity through parameter adaptation
2Reliability
If the operating voltage is increased to ensure reliable operation of all select transistors, then operation reliability improves, but power consumption increases
Solution Approach 1:
The patent applies different operating voltages to different groups of select transistors based on their local threshold voltage characteristics. Instead of uniformly increasing voltage for all transistors, the system applies higher voltage only to transistors with lower threshold voltage that need it, and lower voltage to transistors with higher threshold voltage that don't need excessive voltage, thereby reducing overall power consumption while maintaining reliability
Solution Approach 2:
The patent adjusts the operating voltage parameter adaptively based on threshold voltage monitoring results. By changing the voltage parameter from a fixed high level to a variable level that matches actual device needs, the system reduces unnecessary power consumption while ensuring each transistor operates reliably at its optimal voltage level
Data Source
AI summary
Provided herein may be a memory device and a method of operating the same. The memory device may include: a memory block including a plurality of select transistors; a peripheral circuit configured to perform a program operation and a read operation on the memory block; and control logic configured to control the peripheral circuits to perform the program operation and the read operation, and to adjust and set a potential level of a select transistor operating voltage to be applied to the plurality of select transistors based on a threshold voltage monitoring operation on the plurality of select transistors.