Selective ALD Coating on Modified Substrates Using Crosslinked Inhibitors
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Solution Overview
Problem
Existing methods struggle to form atomic layer deposition (ALD) coating films with good selectivity on substrates with multiple regions of different materials, leading to non-specific film formation.
Innovation Solution
A method involving a substrate treatment with a chemical liquid containing a low-molecular-weight compound with functional and crosslinkable groups, followed by ALD treatment, forms a first coating film that inhibits ALD coating on certain regions, allowing selective ALD film formation on others.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a low-molecular-weight aminosilane compound is used as an inhibitor for ALD treatment, then the ALD coating film formation is inhibited in the adsorbed region, but the ALD coating film is still formed on the modified film region, resulting in poor selectivity
Solution Approach 1:
The patent changes the molecular weight parameter of the inhibitor compound from low-molecular-weight to high-molecular-weight (polymer), and modifies the functional group from simple aminosilane to polymerized aminosilane with crosslinkable groups. This parameter change transforms the coating properties to achieve both high selectivity and heat resistance.
Solution Approach 2:
The patent creates a composite inhibitor system by polymerizing aminosilane compounds to form polymerized aminosilane inhibitors. This composite material combines the ALD inhibition capability with enhanced heat resistance and film-forming properties, resolving the contradiction between selectivity and reliability.
2Manufacturing precision
If photolithography is used for pattern formation, then registration of patterns is required, but the accuracy required for further miniaturization cannot be met
Solution Approach 1:
The patent extracts the pattern formation function from the photolithography process and transfers it to the ALD process itself. By using polymerized aminosilane inhibitors as self-aligned masks, the pattern definition is taken out of the photolithography registration system and embedded in the material science of the ALD inhibition layer.
Solution Approach 2:
The patent introduces polymerized aminosilane compounds as an intermediary material that serves dual functions: as an ALD inhibition layer for selective coating and as a self-aligned pattern mask. This intermediary eliminates the need for photolithography registration while achieving the required pattern accuracy.
3Manufacturing precision
If ALD treatment is performed on a substrate with multiple regions of different materials, then coating film formation occurs on all regions, but selective film formation on specific regions cannot be achieved
Solution Approach 1:
The patent applies local quality by creating regions with different ALD reactivity through selective adsorption of polymerized aminosilane inhibitors. The inhibitor forms a protective layer only on specific regions (e.g., metal regions), leaving other regions (e.g., insulating regions) exposed for ALD coating, thereby achieving spatially selective film formation.
Solution Approach 2:
The patent performs preliminary action by pre-treating the substrate with polymerized aminosilane inhibitor solution before ALD treatment. This preliminary adsorption step creates a self-aligned mask pattern that directs subsequent ALD coating to specific regions, simplifying the overall manufacturing process while achieving high selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves ALD coating films with high selectivity and improved heat resistance, ensuring precise film deposition only on desired substrate areas.
Implementation Method 1
a step 1 of bringing a substrate having at least two surfaces of a first surface and a second surface, which are composed of materials different from each other, into contact with a chemical liquid including a compound which has a functional group bonded to or adsorbed on the first surface
Implementation Method 2
a compound which has a functional group bonded to or adsorbed on the first surface, and a crosslinkable group
Implementation Method 3
a step 2 of subjecting the substrate obtained in the step 1 to an atomic layer deposition treatment to form a second coating film on the second surface
Data Source
AI summary
The present invention provides a method for producing a modified substrate, the method making it possible to produce a modified substrate in which an ALD coating film is formed in a predetermined region with good selectivity by performing an ALD treatment, and a method for producing a semiconductor device, the method involving the method for producing a modified substrate. The method for producing a modified substrate of an embodiment of the present invention includes a step 1 of bringing a substrate having at least two surfaces of a first surface and a second surface, which are composed of materials different from each other, into contact with a chemical liquid including a compound which has a functional group bonded to or adsorbed on the first surface, and a crosslinkable group, and has a molecular weight of 500 or less, and a solvent, to form a first coating film on the first surface; and a step 2 of subjecting the substrate obtained in the step 1 to an atomic layer deposition treatment to form a second coating film on the second surface.