Selective Aluminum Oxide Deposition via Thermal Etching
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Solution Overview
Problem
Current integrated circuit manufacturing processes involve complex steps like deposition over the entire substrate surface followed by selective etching, which can be streamlined through selective deposition techniques that deposit materials only on specific surfaces without the need for extensive subsequent processing.
Innovation Solution
A method involving super-cycles of selective deposition, oxidation, and thermal etching is employed to form aluminum oxide selectively on a first surface of a substrate relative to a second surface, using vapor phase precursors and etchants like organic halides, with optional pretreatment processes to enhance selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If deposition is performed over the entire substrate surface, then complete coverage is achieved, but process complexity increases due to the need for subsequent selective etching
Solution Approach 1:
The substrate surfaces are segmented into distinct first and second surfaces with different properties. The deposition process is segmented into selective deposition on the first surface, followed by separate etching and oxidation steps. This segmentation enables selective formation of aluminum oxide on the first surface while leaving the second surface unaffected, eliminating the need for complex mask layers and reducing overall process complexity
Solution Approach 2:
Different surfaces of the substrate are given different local qualities through selective pretreatment. The first surface is activated or modified to be receptive to aluminum deposition, while the second surface maintains its original properties. This local differentiation ensures that aluminum oxide forms only on the first surface, achieving high selectivity without requiring extensive subsequent processing
2Manufacturing precision
If multiple processing steps are used for selective material formation, then selectivity is improved, but manufacturing time increases
Solution Approach 1:
Pretreatment steps are performed preliminarily on the substrate surfaces before deposition to create selective receptivity. The first surface is prepared with specific surface properties that promote aluminum deposition, while the second surface is left untreated or differently treated. This preliminary action establishes the selective deposition pattern early, reducing the need for multiple corrective or refinement steps later in the process
Solution Approach 2:
Process parameters such as temperature, pressure, and reactant flow rates are optimized to enhance selectivity at each step. The deposition, etching, and oxidation parameters are tuned so that reactions occur preferentially on the first surface. By controlling parameters rather than adding steps, the process achieves high selectivity efficiently
3Manufacturing precision
If selective deposition is achieved through complex processes, then deposition selectivity is improved, but process simplicity deteriorates
Solution Approach 1:
Instead of attempting to prevent deposition on the second surface through complex masking, the process inverts the approach by actively promoting deposition on the first surface through selective pretreatment and controlled reaction conditions. The second surface naturally remains unaffected due to its different properties, simplifying the overall process while maintaining high deposition selectivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise deposition of aluminum oxide on specific surfaces, reducing complexity and improving selectivity, with deposition ratios exceeding 10:1 and etch selectivity relative to SiO2, enhancing manufacturing efficiency.
Implementation Method 1
contacting the substrate with a first vapor phase precursor comprising aluminum; and contacting the substrate with a second vapor phase precursor comprising nitrogen
Implementation Method 2
oxidizing at least a portion of the aluminum nitride by one or more oxidizing sub-cycles... contacting the substrate with a first vapor phase precursor comprising oxygen
Implementation Method 3
etching the aluminum oxide or aluminum nitride, or a combination thereof by one or more thermal etching sub-cycles wherein the etchant is an organic halide
Data Source
AI summary
A method, system and apparatus for selectively forming aluminum oxide on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising sub-cycles: a) selectively depositing aluminum nitride on the first surface of the substrate relative to the second different surface of the substrate by one or more selective deposition sub-cycles, b) oxidizing at least a portion of the aluminum nitride by one or more oxidizing sub-cycles, c) etching the aluminum oxide or aluminum nitride, or a combination thereof by one or more thermal etching sub-cycles wherein the etchant is an organic halide, and repeating sub-cycles a), b) or c), or a combination thereof until a desired thickness of an aluminum oxide is formed on the first surface.