Selective Blocking Layers for Pinhole-Free Metal Deposition
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high-quality selective deposition on metallic surfaces, particularly in minimizing pinholes in self-assembled monolayers (SAMs) and efficiently removing these layers without damaging substrate materials.
Innovation Solution
A method of selectively depositing a blocking layer on metallic surfaces using a blocking compound with a 4-8 member heterocyclic ring or an amine with specific substituent groups, which forms a high-quality, pinhole-free SAM that can be readily removed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional blocking compounds are used to form self-assembled monolayers on metallic surfaces, then selective deposition can be achieved, but pinholes form in the SAM layer reducing deposition quality
Solution Approach 1:
The patent changes the chemical parameters of the blocking compound by specifying particular functional groups (thiols, selenols, sultones, sulfonic acids, carboxylic acids, phosphonic acids, phosphines, isocyanates, silanes, and their combinations) that are known to form pinhole-free self-assembled monolayers on metallic surfaces. This parameter change in the compound structure directly addresses the pinhole formation issue while maintaining selective deposition capability.
2Adaptability or versatility
If SAM layers are formed to block metallic surfaces for selective deposition, then material selectivity is achieved, but the SAM layers are difficult to remove without damaging substrate materials
Solution Approach 1:
The patent employs blocking compounds with specific functional groups that form SAM layers designed to be easily removed after serving their blocking function. The use of organic functional groups that can be selectively removed through standard semiconductor processing techniques (such as oxygen plasma, ozone treatment, or chemical etching) allows the SAM layer to be discarded cleanly without damaging the underlying metallic or dielectric substrate materials.
3Device complexity
If blocking layers are deposited on metallic surfaces to enable selective material deposition, then integration complexity is reduced, but pinhole formation causes selectivity failure
Solution Approach 1:
The patent uses composite blocking compounds that combine metallic surface affinity with specific organic functional groups (thiols, selenols, sultones, sulfonic acids, carboxylic acids, phosphonic acids, phosphines, isocyanates, silanes, and their combinations). This composite structure ensures strong adhesion to metallic surfaces while the organic portion forms a continuous, pinhole-free monolayer that provides reliable selectivity for subsequent deposition processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively forms a blocking layer that minimizes pinholes, enabling high-quality selective deposition, and allows for easy removal of the SAM layer without damaging the substrate, thus addressing key challenges in semiconductor manufacturing.
Implementation Method 1
A key challenge in achieving high quality selective deposition is minimizing pin holes in self-assembled monolayers (SAMs) on a blocked surface
Implementation Method 2
exposing a substrate comprising a metallic material having a first surface and a dielectric material having a second surface to a blocking compound to selectively form a blocking layer on the first surface over the second surface
Data Source
AI summary
Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.