Selective Carbon ALD on Metal Surfaces Without Dielectric Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing atomic layer deposition (ALD) techniques result in non-selective carbon deposition on both dielectric and metal materials, leading to undesirable etching and adverse effects on electronic device performance.
Innovation Solution
Utilizing specific carbon halide precursors and controlled ALD processes to selectively deposit high-purity carbon on metal materials while avoiding deposition on dielectric materials, using techniques such as exposing materials to a first precursor to form a carbon compound, followed by purging and subsequent exposure to a second precursor to enhance carbon layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional ALD techniques are used to deposit carbon, then carbon deposition occurs on both dielectric and metal materials, but this results in non-selective deposition and undesirable etching
Solution Approach 1:
The patent applies local quality by using different precursors for different material types: a first precursor (e.g., CO, CO2, metal carbonyl) is used to deposit carbon selectively on dielectric materials, while a second precursor (e.g., hydrocarbon, metal organic) is used to deposit carbon on metal materials. This allows the deposition process to adapt its chemistry to the local substrate material, achieving selectivity without compromising coverage.
2Reliability
If selective deposition on metal materials is achieved, then conductivity is enhanced, but deposition on dielectric materials must be avoided
Solution Approach 1:
The patent employs parameter changes by controlling deposition conditions such as temperature, pressure, and precursor selection to achieve material-specific carbon deposition. By adjusting these parameters and using sequential precursor exposure, the process selectively deposits carbon on metal materials to enhance conductivity while preventing deposition on dielectric materials, thus improving device reliability without adverse effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves selective deposition of high-purity carbon on metal materials, enhancing electronic device conductivity without affecting dielectric materials, thereby improving device performance and reducing unwanted etching.
Implementation Method 1
exposing the material to a first precursor to form a first compound on the material
Implementation Method 2
exposing the material to a second precursor, where the second precursor may react with the first compound to leave a second compound on the surface
Implementation Method 3
Atomic layer deposition (ALD) is a technique used to deposit a film in which the film grows on a base material layer by layer
Data Source
AI summary
Methods, systems, and devices for methods for selectively depositing carbon on substrates by atomic layer deposition are described. The described techniques include single precursor and multiple precursor atomic layer deposition processes. For instance, a device may react a first precursor with a first material and a second material to form a carbon compound on the first material and not the second material. The materials may be associated with different growth delays based on being exposed to the first precursor. Multiple precursors may be used where one or both of the precursors may have different growth delays for the first and second materials.