Selective Catalyst Attachment via pH Control for Plating
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Solution Overview
Problem
Conventional methods face challenges in improving the adhesivity between catalysts and SiN films during the plating process, leading to non-selective catalyst attachment and separation issues, which affects the accuracy of hard mask formation in semiconductor processing.
Innovation Solution
A plating method and apparatus that selectively attach a catalyst to a plateable material portion by adjusting the pH of the catalyst solution, preventing precipitation on non-plateable material portions and enhancing adhesivity on plateable material portions, allowing for precise plating layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a catalyst is supplied onto a substrate having both SiO2 film and SiN film, then the catalyst adheres to both films, but the catalyst is not selectively attached to only the plateable material portion
Solution Approach 1:
The patent changes the pH parameter of the catalyst solution to achieve selective catalyst attachment. By adjusting the pH to a specific range (pH 2-4), the catalyst solution selectively adheres to the SiN film while suppressing adhesion to the SiO2 film, thereby achieving manufacturing precision in catalyst placement without complex operational controls
Solution Approach 2:
The patent introduces pH adjustment as an intermediary mechanism to control catalyst adhesion. By using pH-adjusted catalyst solution as a mediator, the system achieves selective attachment to plateable material portions while preventing attachment to non-plateable portions, resolving the contradiction between selectivity and ease of operation
2Strength
If processing is performed to improve adhesivity between catalyst and SiN film, then adhesivity is improved, but adhesivity between catalyst and SiO2 film is also improved
Solution Approach 1:
The patent applies parameter changes by adjusting the pH of the catalyst solution to a specific range (pH 2-4). This pH adjustment strengthens the adhesivity between catalyst and SiN film while simultaneously suppressing adhesivity between catalyst and SiO2 film, thereby achieving both improved strength and manufacturing precision through a single parameter control
Solution Approach 2:
The patent implements local quality by creating different adhesion conditions for different material portions. The pH-adjusted catalyst solution exhibits high adhesivity to SiN film regions while maintaining low adhesivity to SiO2 film regions, allowing selective catalyst attachment to plateable material portions without affecting non-plateable portions
3Productivity
If conventional catalyst supply method is used, then catalyst is supplied onto the substrate, but the plating layer precipitates on non-plateable material portion as well as plateable material portion
Solution Approach 1:
The patent applies preliminary action by adjusting the pH of the catalyst solution before the plating process. This preliminary pH adjustment ensures that the catalyst selectively adheres only to the SiN film portion before plating occurs, preventing unwanted catalyst attachment to SiO2 film and subsequent unwanted plating layer formation, thereby maintaining both productivity and manufacturing precision
Solution Approach 2:
The patent changes the pH parameter of the catalyst solution to achieve selective catalyst and plating layer formation. By maintaining pH in the range of pH 2-4, the system ensures that both catalyst attachment and subsequent plating layer precipitation occur selectively only on plateable material portions, resolving the contradiction between productivity and manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables selective catalyst attachment to plateable material portions, improving processing accuracy and adhesivity, thereby facilitating the use of various materials as hard masks in semiconductor etching processes.
Implementation Method 1
the catalyst uniformly adheres not only to the SiN film but also to the SiO film where the plating layer is not intended to be formed
Implementation Method 2
A pH of the catalyst solution is previously adjusted such that the plating layer is suppressed from being precipitated on the non-plateable material portion while being facilitated to be precipitated on the plateable material portion
Implementation Method 3
forming a plating layer selectively on the plateable material portion by supplying a plating liquid onto the substrate
Data Source
AI summary
A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.