Selective Deposition Blocking Layers for Lateral Film Growth Control
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Solution Overview
Problem
As semiconductor device sizes decrease, controlling lateral film growth and reducing defect density in selective deposition becomes increasingly challenging, requiring new deposition methods that are cost-effective and efficient.
Innovation Solution
The use of a plurality of blocking layers, specifically self-assembled monolayers (SAMs), is employed to selectively form material films on substrates, controlling deposition on different substrate materials and reducing unwanted film growth through strategic layer formation and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography and etching processes are used for selective film deposition, then material films can be deposited on substrates, but lateral film growth occurs and defect density increases
Solution Approach 1:
The patent divides the substrate surface into distinct regions with different surface properties by forming first and second blocking layers on different areas. This segmentation allows selective deposition of material films only on desired regions while preventing lateral growth on blocked regions, thereby improving manufacturing precision and reducing defects
Solution Approach 2:
The patent introduces blocking layers as intermediary substances that mediate between the substrate and the material film deposition process. These blocking layers (first and second blocking layers with different surface energies) act as intermediaries to control where material films deposit, preventing unwanted lateral growth and reducing defect density
2Manufacturing precision
If selective deposition methods are implemented to control lateral growth, then manufacturing precision improves, but process complexity increases
Solution Approach 1:
The patent combines multiple functions into the blocking layer formation process. The first and second blocking layers serve both as deposition control mechanisms and as etch protection layers, merging the selective deposition function with the etch stop function into a single structural element, thereby reducing overall process complexity
Solution Approach 2:
The patent performs preliminary actions by forming blocking layers before the material film deposition step. This preliminary blocking layer formation establishes the selective deposition pattern in advance, allowing the actual film deposition to proceed without complex real-time control mechanisms, thus improving precision without proportionally increasing complexity
3Reliability
If area selective deposition is used to improve line-to-line breakdown margin, then reliability improves, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by creating regions with different surface energies through selective blocking layer formation. The first blocking layer region has different surface properties than the second blocking layer region, enabling localized control of material film deposition. This local differentiation improves line-to-line breakdown margin by ensuring precise material placement without requiring complex global process changes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing steps, improves line-to-line breakdown margin, and enhances electrical leakage performance in semiconductor devices, offering a more efficient and effective method for selective film deposition compared to conventional lithography and etching processes.
Implementation Method 1
forming a first blocking layer containing a first self-assembled monolayer (SAM) on the metal film, forming a second blocking layer containing a second SAM on the metal-containing liner
Implementation Method 2
depositing the material film on the dielectric film, depositing material film nuclei on the metal film, the metal-containing liner, or both the metal film and the metal-containing liner film
Implementation Method 3
removing the material film nuclei by etching
Data Source
AI summary
A substrate processing method for area selective deposition includes providing a substrate containing a first film, a second film, and a third film, forming a first blocking layer on the first film, forming a second blocking layer on the second film, where the second blocking layer is different from the first blocking layer, and selectively forming a material film on the third film. In one example, the first film contains a metal film, second film contains a metal-containing liner that surrounds the metal film, and the third film includes a dielectric film that surrounds the metal-containing liner.