Selective Semiconductor Deposition Using Etch Residue Inhibitors
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Solution Overview
Problem
Current selective deposition methods for semiconductor substrates face challenges such as loss of selectivity over time, material specificity, defect creation, and the need for narrow process windows, making it difficult to achieve precise and efficient deposition of metal and dielectric materials.
Innovation Solution
The method involves selectively depositing a sacrificial material on a semiconductor substrate with regions of different selectivities, followed by the deposition of a non-sacrificial material, and then removing the sacrificial material to ensure net deposition occurs only on specific regions, utilizing periodic etch back/reset operations and differences in electrical properties or chemical bonding to maintain selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional vapor deposition processing is used for selective deposition, then deposition can be achieved on certain film/substrate systems, but selectivity is lost over time
Solution Approach 1:
The patent implements periodic etch back or reset steps that restore both surfaces to a state where selectivity is regained. This cyclic approach alternates between deposition and selective etching, allowing selectivity to be maintained throughout the process duration rather than being lost continuously
Solution Approach 2:
The patent employs etch residue-based inhibitors where the etch process itself generates the sacrificial material that provides deposition inhibition. The etch residues selectively form on surfaces and automatically provide the necessary selectivity control without requiring external inhibitor materials
2Manufacturing precision
If periodic etch back or reset steps are incorporated to restore selectivity, then selectivity is regained, but process complexity increases
Solution Approach 1:
The patent combines the etch and deposition processes into an integrated selective deposition methodology. The etch residues from the etch process are directly utilized as sacrificial materials for deposition inhibition, merging two separate process functions into a coordinated sequence that reduces overall process complexity
3Manufacturing precision
If sacrificial material is deposited selectively on first region, then non-sacrificial material can be deposited on second region, but additional removal step is required
Solution Approach 1:
The patent converts the potentially harmful etch residues into beneficial sacrificial materials that provide deposition inhibition. The residues that would normally be considered waste or contaminants are instead utilized as functional layers that enable selective deposition, eliminating the need for separate sacrificial material deposition and removal steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains selectivity and improves defect elimination, enabling continued device miniaturization, simplified integration, enhanced feature density, and patterning capabilities by ensuring precise deposition on specific substrate regions.
Implementation Method 1
the deposition of the sacrificial material may occur on a first region of the substrate surface by non-covalent bonding
Implementation Method 2
The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region
Data Source
AI summary
Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.