Selective Semiconductor Deposition Using Etch Residue Inhibitors
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Solution Overview
Problem
Current selective deposition methods for semiconductor substrates face challenges such as loss of selectivity over time, material specificity, defect creation, and the need for narrow process windows, which complicates the deposition of metal and dielectric materials and limits thicker film growth.
Innovation Solution
The method involves selectively depositing a sacrificial material on a semiconductor substrate with different selectivity regions, followed by the deposition of a non-sacrificial material, where the sacrificial material is removed to ensure net deposition occurs only on the desired region, utilizing etch residues as inhibitors and alternating between ALD and ALE processes to maintain selectivity and improve defect elimination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional vapor deposition processing (ALD, CVD, PEALD, PECVD) is used for selective deposition, then deposition can be achieved on certain film/substrate systems, but selectivity is lost over time
Solution Approach 1:
The patent implements periodic etch back or reset steps that restore both surfaces to a state where selectivity is regained. This cyclical approach alternates between deposition and selective etching, allowing selectivity to be maintained over extended periods by periodically resetting the surface conditions.
Solution Approach 2:
The patent changes physical or chemical parameters of the substrate surfaces through periodic etch back operations. By modifying surface composition, morphology, or chemical state through controlled etching, the parameters are adjusted to restore high selectivity for the deposition process.
2Manufacturing precision
If periodic etch back or reset steps are incorporated to restore selectivity, then selectivity is regained on both surfaces, but process complexity increases
Solution Approach 1:
The patent merges the selective etch back step with the deposition process into an integrated selective deposition methodology. By combining these operations and optimizing their sequencing, the overall process complexity is managed while maintaining high selectivity throughout the deposition sequence.
3Length of stationary object
If selective deposition is used to deposit thicker films, then film thickness can be increased, but defects may be created
Solution Approach 1:
The patent applies beforehand cushioning by performing periodic etch back steps that remove potential defect nuclei before they can grow into harmful defects. This proactive removal of defect-prone material during the deposition sequence prevents defect accumulation in thicker films.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains growth selectivity, enhances feature density and scaling, simplifies integration, and reduces defects by using etch residue-based inhibitors to enhance deposition selectivity and control nucleation, allowing for thicker film growth while minimizing defects.
Implementation Method 1
the deposition of the sacrificial material may occur on a first region of the substrate surface by non-covalent bonding
Implementation Method 2
The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region
Data Source
AI summary
Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.