Selective Deposition via Passivation and Self-Assembled Monolayers
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Solution Overview
Problem
Current selective deposition methods struggle to accurately form desired materials on small, high-aspect-ratio structures in semiconductor devices, often resulting in undesired material deposition on unintended locations due to limitations in geometry and processing capabilities.
Innovation Solution
A method involving the formation of a passivation layer on specific substrate materials, followed by self-assembled monolayers and atomic layer deposition, allows for selective material deposition on specific locations by utilizing hydroxy terminated hydrocarbon gases and metal-containing passivation layers to confine the deposition process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective deposition is used, then material can be deposited on certain locations, but the deposition cannot be efficiently confined at small dimensions resulting in global formation on entire substrate
Solution Approach 1:
The patent introduces self-assembled monolayers (SAMs) as intermediary layers between the substrate and the depositing material. These SAMs selectively form on specific substrate materials (e.g., silicon dioxide) and serve as templates that guide and confine the subsequent material deposition process, enabling precise spatial control at small dimensions
Solution Approach 2:
The patent performs preliminary surface modification by forming passivation layers and self-assembled monolayers before the main deposition process. This preliminary action creates distinct surface chemistries that predetermine where materials will deposit, ensuring confinement to designated locations even at small critical dimensions
2Manufacturing precision
If conventional selective deposition is used, then material can be deposited on certain locations, but undesired materials are formed on undesired locations
Solution Approach 1:
The patent applies different surface treatments and passivation layers to different regions of the substrate, creating locally distinct surface properties. For example, silicon dioxide regions receive different treatment than silicon regions, causing materials to deposit only on intended locations based on their local surface chemistry
Solution Approach 2:
Self-assembled monolayers act as intermediary layers that provide selective adhesion sites. These SAMs form only on specific substrate materials and serve as mediators that attract or repel depositing materials, ensuring high reliability in material placement by preventing deposition on undesired locations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise and selective deposition of materials on semiconductor substrates, improving the formation of structures with small critical dimensions and high aspect ratios, enhancing the accuracy and reliability of semiconductor device manufacturing.
Implementation Method 1
supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate
Implementation Method 2
selectively forming self assembled monolayers on a second material of the substrate
Implementation Method 3
selectively forming a material layer on the passivation layer using an atomic layer deposition process
Data Source
AI summary
Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.