Selective Deposition Using Etch Residue Reset Cycles
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Solution Overview
Problem
Current selective deposition methods for semiconductor substrates face challenges such as loss of selectivity over time, material specificity, defect creation, and the need for narrow process windows, making it difficult to achieve precise and efficient deposition of metal and dielectric materials.
Innovation Solution
The method involves selectively depositing a sacrificial material on a semiconductor substrate with regions of different selectivities, followed by the deposition of a non-sacrificial material, and then removing the sacrificial material to ensure net deposition occurs only on specific regions, utilizing periodic etch back/reset operations and differences in electrical properties or chemical bonding to maintain selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional vapor deposition processing is used for selective deposition, then deposition can be achieved on certain film/substrate systems, but selectivity is lost over time
Solution Approach 1:
The patent implements periodic etch back or reset steps that restore both surfaces to a state where selectivity is regained. This cyclical approach alternates between deposition and etching operations, allowing selective deposition to be maintained over extended periods by periodically resetting the surface conditions.
Solution Approach 2:
The patent modifies deposition parameters and introduces etch back steps to dynamically adjust the surface states. By changing process parameters between deposition and etching modes, the system maintains selective deposition capability over time through controlled parameter transitions.
2Manufacturing precision
If periodic etch back or reset steps are incorporated to restore selectivity, then selectivity is regained, but process complexity increases
Solution Approach 1:
The patent combines deposition and etching operations into an integrated selective deposition process. By merging these operations and using them in sequence, the system achieves selectivity restoration without requiring entirely separate process modules, thereby managing complexity.
Solution Approach 2:
The etch back step serves multiple functions: it removes deposited material to restore selectivity, prepares surfaces for subsequent deposition, and enables the cyclic operation mode. This multi-functionality reduces the need for additional dedicated process steps.
3Manufacturing precision
If selective deposition is used to deposit material on specific regions, then precise patterning is achieved, but the process window is narrow
Solution Approach 1:
The patent employs dynamic control of deposition and etching parameters during the cyclic process. By adjusting parameters in real-time based on the process stage and surface state, the system maintains precise patterning while adapting to varying conditions, thereby expanding the effective process window.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains growth selectivity, enhances feature density and scaling, and simplifies integration by allowing precise control over deposition, reducing defects and the need for additional lithography and etch processes.
Implementation Method 1
the deposition of the sacrificial material may occur on a first region of the substrate surface by non-covalent bonding
Implementation Method 2
the deposition of the non-sacrificial material may occur on the second region of the substrate surface by covalent bonding
Implementation Method 3
the selective deposition of the sacrificial material may occur during a periodic etch back/reset operation during which etch residues produced provide some or all of the sacrificial material for the selective deposition
Data Source
AI summary
Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.