Selective Deposition on Silicon Dielectrics via Nitrided Surface Blocking
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Solution Overview
Problem
The semiconductor industry faces challenges in selectively depositing films on silicon-based dielectrics without depositing on hydrogen-terminated silicon surfaces, as existing methods struggle to effectively block silicon hydrogen bonds, limiting integration schemes and device miniaturization progress.
Innovation Solution
A method involving nitriding agents like ammonia to convert hydrogen-terminated silicon surfaces into amine-terminated surfaces, which are then exposed to blocking molecules such as undecanal to form a blocking layer, allowing selective deposition on dielectric surfaces like SiO2 while preventing deposition on silicon surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional surface blocking methods are used, then deposition selectivity between dielectrics and silicon is attempted, but the blocking fails on hydrogen-terminated silicon surfaces due to strong Si-H bonds
Solution Approach 1:
The patent applies preliminary action by performing a nitriding treatment on the silicon surface before the deposition process. This converts the hydrogen-terminated silicon surface into a nitrogen-containing surface that can subsequently react with blocking molecules, thereby enabling effective blocking that would not be possible with the original Si-H bonds.
Solution Approach 2:
The patent changes the chemical parameter of the silicon surface by introducing nitrogen through nitriding. This transforms the surface chemistry from Si-H termination to a nitrogen-containing surface, fundamentally altering its reactivity characteristics and enabling subsequent blocking molecule attachment.
2Manufacturing precision
If surface blocking is implemented to achieve selective deposition on dielectrics, then additional process steps are required, but this increases process complexity
Solution Approach 1:
The patent merges the nitriding step with the surface blocking step into an integrated process flow. The nitriding treatment is performed immediately followed by blocking molecule exposure without intermediate cleaning or processing steps, combining two functions into a seamless sequence that reduces overall process complexity.
Solution Approach 2:
The nitrogen-containing surface acts as an intermediary that bridges the gap between the silicon substrate and the blocking molecules. This intermediary layer enables the blocking molecules to attach effectively to the silicon surface, facilitating selective deposition while maintaining a relatively simple process flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables selective film deposition on dielectric surfaces with minimal to no deposition on hydrogen-terminated silicon, simplifying integration schemes and advancing device miniaturization by creating a passivated surface that reacts with blocking molecules without affecting hydroxide-terminated surfaces.
Implementation Method 1
exposing a substrate having a first surface with hydrogen terminations and a second surface with hydroxide terminations to a nitriding agent to form an amine terminated first surface
Implementation Method 2
The amine terminated first surface is exposed to a blocking molecule to form a blocking layer on the first surface
Data Source
AI summary
Methods of selectively depositing a film on a hydroxide terminated surface relative to a hydrogen terminated surface are described. The hydrogen terminated surface is exposed to a nitriding agent to form an amine terminated surface which is exposed to a blocking molecule to form a blocking layer on the surface. A film can then be selectively deposited on the hydroxide terminated surface.